| 9502568 |
Non-planar quantum well device having interfacial layer and method of forming same |
Willy Rachmady, Ravi Pillarisetty, Robert S. Chau |
2016-11-22 |
| 9490329 |
Semiconductor devices with germanium-rich active layers and doped transition layers |
Willy Rachmady, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French, Aaron A. Budrevich |
2016-11-08 |
| 9472613 |
Conversion of strain-inducing buffer to electrical insulator |
Annalisa Cappellani, Glenn A. Glass, Kelin J. Kuhn, Stephen M. Cea |
2016-10-18 |
| 9461141 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Gilbert Dewey, Niloy Mukherjee +3 more |
2016-10-04 |
| 9397166 |
Strained channel region transistors employing source and drain stressors and systems including the same |
Harold W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros, Niloy Mukherjee |
2016-07-19 |
| 9391181 |
Lattice mismatched hetero-epitaxial film |
Benjamin Chu-Kung, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey, Niti Goel +8 more |
2016-07-12 |
| 9337291 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Seung Hoon Sung, Jessica S. Kachian, Jack T. Kavalieros +5 more |
2016-05-10 |
| 9306068 |
Stain compensation in transistors |
Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros |
2016-04-05 |
| 9236476 |
Techniques and configuration for stacking transistors of an integrated circuit device |
Ravi Pillarisetty, Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady +3 more |
2016-01-12 |