| 9484432 |
Contact resistance reduction employing germanium overlayer pre-contact metalization |
Anand S. Murthy, Tahir Ghani |
2016-11-01 |
| 9472613 |
Conversion of strain-inducing buffer to electrical insulator |
Annalisa Cappellani, Van H. Le, Kelin J. Kuhn, Stephen M. Cea |
2016-10-18 |
| 9437691 |
Column IV transistors for PMOS integration |
Anand S. Murthy |
2016-09-06 |
| 9437710 |
Method for improving transistor performance through reducing the salicide interface resistance |
Anand S. Murthy, Boyan Boyanov, Thomas Hoffman |
2016-09-06 |
| 9397102 |
III-V layers for N-type and P-type MOS source-drain contacts |
Anand S. Murthy, Tahir Ghani |
2016-07-19 |
| 9349810 |
Selective germanium P-contact metalization through trench |
Anand S. Murthy, Tahir Ghani |
2016-05-24 |
| 9343559 |
Nanowire transistor devices and forming techniques |
Kelin J. Kuhn, Seiyon Kim, Anand S. Murthy, Daniel B. Aubertine |
2016-05-17 |