| 9490320 |
Uniaxially strained nanowire structure |
Stephen M. Cea, Seiyon Kim |
2016-11-08 |
| 9484272 |
Methods for fabricating strained gate-all-around semiconductor devices by fin oxidation using an undercut etch-stop layer |
Abhijit Jayant Pethe, Tahir Ghani, Harry Gomez |
2016-11-01 |
| 9472399 |
Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates |
Pragyansri Pathi, Bruce Beattie, Abhijit Jayant Pethe |
2016-10-18 |
| 9472613 |
Conversion of strain-inducing buffer to electrical insulator |
Van H. Le, Glenn A. Glass, Kelin J. Kuhn, Stephen M. Cea |
2016-10-18 |
| 9461143 |
Gate contact structure over active gate and method to fabricate same |
Abhijit Jayant Pethe, Tahir Ghani, Mark Bohr, Clair Webb, Harry Gomez |
2016-10-04 |
| 9425212 |
Isolated and bulk semiconductor devices formed on a same bulk substrate |
Kelin J. Kuhn, Rafael Rios, Harry Gomez |
2016-08-23 |