Issued Patents 2016
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9508821 | Self-aligned contacts | Mark Bohr, Nadia M. Rahhal-Orabi, Subhash M. Joshi, Joseph M. Steigerwald, Jason W. Klaus +2 more | 2016-11-29 |
| 9490364 | Semiconductor transistor having a stressed channel | Anand S. Murthy, Robert S. Chau, Kaizad Mistry | 2016-11-08 |
| 9484272 | Methods for fabricating strained gate-all-around semiconductor devices by fin oxidation using an undercut etch-stop layer | Annalisa Cappellani, Abhijit Jayant Pethe, Harry Gomez | 2016-11-01 |
| 9484447 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Anand S. Murthy, Mark Armstrong, Rafael Rios +2 more | 2016-11-01 |
| 9484432 | Contact resistance reduction employing germanium overlayer pre-contact metalization | Glenn A. Glass, Anand S. Murthy | 2016-11-01 |
| 9466565 | Self-aligned contacts | Mark Bohr, Nadia M. Rahhai-Orabi, Subhash M. Joshi, Joseph M. Steigerwald, Jason W. Klaus +2 more | 2016-10-11 |
| 9461143 | Gate contact structure over active gate and method to fabricate same | Abhijit Jayant Pethe, Mark Bohr, Clair Webb, Harry Gomez, Annalisa Cappellani | 2016-10-04 |
| 9443980 | Pulsed laser anneal process for transistors with partial melt of a raised source-drain | Jacob Jensen, Mark Liu, Harold W. Kennel, Robert James | 2016-09-13 |
| 9397102 | III-V layers for N-type and P-type MOS source-drain contacts | Glenn A. Glass, Anand S. Murthy | 2016-07-19 |
| 9349810 | Selective germanium P-contact metalization through trench | Glenn A. Glass, Anand S. Murthy | 2016-05-24 |
| 9240322 | Method for forming superactive deactivation-resistant junction with laser anneal and multiple implants | Jacob Jensen, Harold W. Kennel, Robert James, Mark Liu | 2016-01-19 |