| 9508821 |
Self-aligned contacts |
Mark Bohr, Nadia M. Rahhal-Orabi, Subhash M. Joshi, Joseph M. Steigerwald, Jason W. Klaus +2 more |
2016-11-29 |
| 9490364 |
Semiconductor transistor having a stressed channel |
Anand S. Murthy, Robert S. Chau, Kaizad Mistry |
2016-11-08 |
| 9484272 |
Methods for fabricating strained gate-all-around semiconductor devices by fin oxidation using an undercut etch-stop layer |
Annalisa Cappellani, Abhijit Jayant Pethe, Harry Gomez |
2016-11-01 |
| 9484447 |
Integration methods to fabricate internal spacers for nanowire devices |
Seiyon Kim, Kelin J. Kuhn, Anand S. Murthy, Mark Armstrong, Rafael Rios +2 more |
2016-11-01 |
| 9484432 |
Contact resistance reduction employing germanium overlayer pre-contact metalization |
Glenn A. Glass, Anand S. Murthy |
2016-11-01 |
| 9466565 |
Self-aligned contacts |
Mark Bohr, Nadia M. Rahhai-Orabi, Subhash M. Joshi, Joseph M. Steigerwald, Jason W. Klaus +2 more |
2016-10-11 |
| 9461143 |
Gate contact structure over active gate and method to fabricate same |
Abhijit Jayant Pethe, Mark Bohr, Clair Webb, Harry Gomez, Annalisa Cappellani |
2016-10-04 |
| 9443980 |
Pulsed laser anneal process for transistors with partial melt of a raised source-drain |
Jacob Jensen, Mark Liu, Harold W. Kennel, Robert James |
2016-09-13 |
| 9397102 |
III-V layers for N-type and P-type MOS source-drain contacts |
Glenn A. Glass, Anand S. Murthy |
2016-07-19 |
| 9349810 |
Selective germanium P-contact metalization through trench |
Glenn A. Glass, Anand S. Murthy |
2016-05-24 |
| 9240322 |
Method for forming superactive deactivation-resistant junction with laser anneal and multiple implants |
Jacob Jensen, Harold W. Kennel, Robert James, Mark Liu |
2016-01-19 |