Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes

Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes

US Patent 9437706 · Granted Sep 6, 2016

Estimated economic value: $9,244,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nanowire transistor fabrication with hardmask layers2025
Staggered vertically spaced integrated circuit line metallization with different2025
Capacitor with dual dielectric layers2025
Subtractively patterned interconnect structures for integrated circuits2025
Integrating embedded memory with logic interconnects2025
Method of forming capacitors through wafer bonding2025
Conductive contacts wrapped around epitaxial source or drain regions2025
Smooth titanium nitride layers and methods of forming the same2025
Method of integrating a capacitor including a non-linear polar material with a t2025
Capacitor with an electrically conductive layer coupled with a metal layer of th2025
Gate coupled non-linear polar material based capacitors for memory and logic2025
Gate-all-around integrated circuit structures having germanium-diffused nanoribb2025