Issued Patents 2011
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8084309 | Extremely thin silicon on insulator (ETSOI) complementary metal oxide semiconductor (CMOS) with in-situ doped source and drain regions formed by a single mask | Kangguo Cheng, Ghavam G. Shahidi | 2011-12-27 |
| 8053809 | Device including high-K metal gate finfet and resistive structure and method of forming thereof | Kangguo Cheng, Ying Zhang | 2011-11-08 |
| 8035173 | CMOS transistors with differential oxygen content high-K dielectrics | Huiming Bu, Eduard A. Cartier, Young-Hee Kim, Barry P. Linder, Vijay Narayanan +2 more | 2011-10-11 |
| 8030709 | Metal gate stack and semiconductor gate stack for CMOS devices | Charlotte DeWan Adams, Philip A. Fisher, William K. Henson, Jeffrey W. Sleight | 2011-10-04 |
| 8022488 | High-performance FETs with embedded stressors | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2011-09-20 |
| 8021949 | Method and structure for forming finFETs with multiple doping regions on a same chip | Kangguo Cheng, Ying Zhang | 2011-09-20 |
| 8018005 | CMOS (complementary metal oxide semiconductor) devices having metal gate NFETs and poly-silicon gate PFETs | William K. Henson, Richard S. Wise, Hongwen Yan | 2011-09-13 |
| 8013392 | High mobility CMOS circuits | Oleg Gluschenkov, Huilong Zhu | 2011-09-06 |
| 8013367 | Structure and method for compact long-channel FETs | Carl Radens, Anthony K. Stamper | 2011-09-06 |
| 8008138 | Extremely thin semiconductor on insulator semiconductor device with suppressed dopant segregation | Kangguo Cheng, Ghavam G. Shahidi | 2011-08-30 |
| 8008724 | Structure and method to enhance both nFET and pFET performance using different kinds of stressed layers | Haining Yang, Huilong Zhu | 2011-08-30 |
| 8003455 | Implantation using a hardmask | Kangguo Cheng, Ying Zhang | 2011-08-23 |
| 7999323 | Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devices | Eduard A. Cartier, Matthew W. Copel, Rajarao Jammy, Young-Hee Kim, Barry P. Linder +3 more | 2011-08-16 |
| 7993999 | High-K/metal gate CMOS finFET with improved pFET threshold voltage | Veeraraghavan S. Basker, Kangguo Cheng, Johnathan E. Faltermeier, Ali Khakifirooz | 2011-08-09 |
| 7989291 | Anisotropic stress generation by stress-generating liners having a sublithographic width | Lawrence A. Clevenger, Elbert E. Huang, Sampath Purushothaman, Carl Radens | 2011-08-02 |
| 7960790 | Self-aligned planar double-gate transistor structure | Omer H. Dokumaci, Kathryn Guarini, Suryanararyan G. Hegde, Meikei Ieong, Erin C. Jones | 2011-06-14 |
| 7935588 | Enhanced transistor performance by non-conformal stressed layers | Xiao Hu Liu | 2011-05-03 |
| 7923782 | Hybrid SOI/bulk semiconductor transistors | Huilong Zhu, Philip J. Oldiges, Xinlin Wang, Oleg Gluschenkov, Huajie Chen +1 more | 2011-04-12 |
| 7883944 | Ultra-thin semiconductor on insulator metal gate complementary field effect transistor with metal gate and method of forming thereof | Huilong Zhu, Philip J. Oldiges | 2011-02-08 |
| 7880243 | Simple low power circuit structure with metal gate and high-k dielectric | Eduard A. Cartier, Barry P. Linder, Vijay Narayanan, Vamsi K. Paruchuri | 2011-02-01 |
| 7872317 | Dual metal gate self-aligned integration | Alessandro C. Callegari, Michael P. Chudzik, Vijay Narayanan, Vamsi K. Paruchuri, Michelle L. Steen | 2011-01-18 |
| 7863124 | Residue free patterned layer formation method applicable to CMOS structures | Michael P. Chudzik, William K. Henson, Hongwen Yan, Ying Zhang | 2011-01-04 |