Issued Patents 2011
Showing 1–25 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8084309 | Extremely thin silicon on insulator (ETSOI) complementary metal oxide semiconductor (CMOS) with in-situ doped source and drain regions formed by a single mask | Bruce B. Doris, Ghavam G. Shahidi | 2011-12-27 |
| 8053823 | Simplified buried plate structure and process for semiconductor-on-insulator chip | Ramachandra Divakaruni, Herbert L. Ho, Carl Radens | 2011-11-08 |
| 8053809 | Device including high-K metal gate finfet and resistive structure and method of forming thereof | Bruce B. Doris, Ying Zhang | 2011-11-08 |
| 8030707 | Semiconductor structure | Naftali E. Lustig, Daewon Yang | 2011-10-04 |
| 8030736 | Fin anti-fuse with reduced programming voltage | Roger A. Booth, Jr., Chandrasekharan Kothandaraman | 2011-10-04 |
| 8021949 | Method and structure for forming finFETs with multiple doping regions on a same chip | Bruce B. Doris, Ying Zhang | 2011-09-20 |
| 8022488 | High-performance FETs with embedded stressors | Bruce B. Doris, Ali Khakifirooz, Ghavam G. Shahidi | 2011-09-20 |
| 8021945 | Bottle-shaped trench capacitor with enhanced capacitance | Xi Li, Russell H. Arndt, Richard O. Henry, Jinghong Li | 2011-09-20 |
| 8008160 | Method and structure for forming trench DRAM with asymmetric strap | Xi Li, Richard S. Wise | 2011-08-30 |
| 8008696 | Band gap modulated optical sensor | Toshiharu Furukawa, Robert R. Robison, William R. Tonti | 2011-08-30 |
| 8008138 | Extremely thin semiconductor on insulator semiconductor device with suppressed dopant segregation | Bruce B. Doris, Ghavam G. Shahidi | 2011-08-30 |
| 8003455 | Implantation using a hardmask | Bruce B. Doris, Ying Zhang | 2011-08-23 |
| 8003488 | Shallow trench isolation structure compatible with SOI embedded DRAM | Munir D. Naeem, David M. Dobuzinsky, Byeong Y. Kim | 2011-08-23 |
| 7993999 | High-K/metal gate CMOS finFET with improved pFET threshold voltage | Veeraraghavan S. Basker, Bruce B. Doris, Johnathan E. Faltermeier, Ali Khakifirooz | 2011-08-09 |
| 7986022 | Semispherical integrated circuit structures | Toshiharu Furukawa, Robert R. Robison, William R. Tonti, Richard Q. Williams | 2011-07-26 |
| 7984408 | Structures incorporating semiconductor device structures with reduced junction capacitance and drain induced barrier lowering | Louis L. Hsu, Jack A. Mandelman, Haining Yang | 2011-07-19 |
| 7977766 | Trench anti-fuse structures for a programmable integrated circuit | Roger A. Booth, Jr., Jack A. Mandelman, William R. Tonti | 2011-07-12 |
| 7964487 | Carrier mobility enhanced channel devices and method of manufacture | Haining Yang | 2011-06-21 |
| 7955909 | Strained ultra-thin SOI transistor formed by replacement gate | Junedong Lee | 2011-06-07 |
| 7951657 | Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (S0I) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor | Johnathan E. Faltermeier, Toshiharu Furukawa, Xuefeng Hua | 2011-05-31 |
| 7939876 | Metallized conductive strap spacer for SOI deep trench capacitor | Byeong Y. Kim | 2011-05-10 |
| 7935998 | Self-aligned body contact for a semiconductor-on-insulator trench device and method of fabricating same | Ramachandra Divakaruni | 2011-05-03 |
| 7928436 | Methods for forming germanium-on-insulator semiconductor structures using a porous layer and semiconductor structures formed by these methods | Brian J. Greene, Jack A. Mandelman | 2011-04-19 |
| 7923815 | DRAM having deep trench capacitors with lightly doped buried plates | Geng Wang, Johnathan E. Faltermeier, Paul C. Parries | 2011-04-12 |
| 7919347 | Methods of fabricating P-I-N diodes, structures for P-I-N diodes and design structure for P-I-N diodes | Ramachandra Divakaruni, Carl Radens, William R. Tonti | 2011-04-05 |