WH

William K. Henson

IBM: 10 patents #218 of 9,568Top 3%
Globalfoundries: 1 patents #73 of 305Top 25%
📍 Beacon, NY: #1 of 44 inventorsTop 3%
🗺 New York: #122 of 10,473 inventorsTop 2%
Overall (2011): #3,143 of 364,097Top 1%
10
Patents 2011

Issued Patents 2011

Showing 1–10 of 10 patents

Patent #TitleCo-InventorsDate
8030709 Metal gate stack and semiconductor gate stack for CMOS devices Charlotte DeWan Adams, Bruce B. Doris, Philip A. Fisher, Jeffrey W. Sleight 2011-10-04
8021939 High-k dielectric and metal gate stack with minimal overlap with isolation region and related methods Michael P. Chudzik, Renee T. Mo, Jeffrey W. Sleight 2011-09-20
8018005 CMOS (complementary metal oxide semiconductor) devices having metal gate NFETs and poly-silicon gate PFETs Bruce B. Doris, Richard S. Wise, Hongwen Yan 2011-09-13
8004059 eFuse containing SiGe stack Deok-kee Kim, Dureseti Chidambarrao, Chandrasekharan Kothandaraman 2011-08-23
7960809 eFuse with partial SiGe layer and design structure therefor Chandrasekharan Kothandaraman, Deok-kee Kim, Dureseti Chidambarrao 2011-06-14
7943493 Electrical fuse having a fully silicided fuselink and enhanced flux divergence Dureseti Chidambarrao, Deok-kee Kim, Chandrasekharan Kothandaraman 2011-05-17
7943460 High-K metal gate CMOS Renee T. Mo, Huiming Bu, Michael P. Chudzik, Mukesh V. Khare, Vijay Narayanan 2011-05-17
7932158 Formation of improved SOI substrates using bulk semiconductor wafers Dureseti Chidambarrao, Kern Rim, Hsingjen Wann, Hung Y. Ng 2011-04-26
7888197 Method of forming stressed SOI FET having doped glass box layer using sacrificial stressed layer Dureseti Chidambarrao, Yaocheng Liu 2011-02-15
7863124 Residue free patterned layer formation method applicable to CMOS structures Michael P. Chudzik, Bruce B. Doris, Hongwen Yan, Ying Zhang 2011-01-04