Issued Patents All Time
Showing 76–99 of 99 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7968422 | Method for forming trench isolation using a gas cluster ion beam growth process | — | 2011-06-28 |
| 7947582 | Material infusion in a trap layer structure using gas cluster ion beam processing | Mitchell Carlson | 2011-05-24 |
| 7905199 | Method and system for directional growth using a gas cluster ion beam | Martin D. Tabat | 2011-03-15 |
| 7883999 | Method for increasing the penetration depth of material infusion in a substrate using a gas cluster ion beam | Yan Shao, Thomas G. Tetreault | 2011-02-08 |
| 7838423 | Method of forming capping structures on one or more material layer surfaces | Arthur J. Learn, Steven R. Sherman, Robert M. Geffken | 2010-11-23 |
| 7825389 | Method and apparatus for controlling a gas cluster ion beam formed from a gas mixture | Matthew C. Gwinn, Jerald P. Dykstra | 2010-11-02 |
| 7799683 | Copper interconnect wiring and method and apparatus for forming thereof | Arthur J. Learn, Steven R. Sherman, Robert M. Geffken | 2010-09-21 |
| 7794798 | Method for depositing films using gas cluster ion beam processing | — | 2010-09-14 |
| 7759251 | Dual damascene integration structure and method for forming improved dual damascene integration structure | Robert M. Geffken | 2010-07-20 |
| 7754588 | Method to improve a copper/dielectric interface in semiconductor devices | Noel Russell, Steven R. Sherman | 2010-07-13 |
| 7521089 | Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers | Joseph T. Hillman, John G. North, Steven P. Caliendo | 2009-04-21 |
| 7410890 | Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation | Allen R. Kirkpatrick, Sean R. Kirkpatrick, Martin D. Tabat, Thomas G. Tetreault, John O. Borland +1 more | 2008-08-12 |
| 7396745 | Formation of ultra-shallow junctions by gas-cluster ion irradiation | John O. Borland, Wesley Skinner | 2008-07-08 |
| 7291558 | Copper interconnect wiring and method of forming thereof | Robert M. Geffken, Steven R. Sherman, Arthur J. Learn | 2007-11-06 |
| 7259036 | Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products | John O. Borland, Wesley Skinner, Martin D. Tabat | 2007-08-21 |
| 7115511 | GCIB processing of integrated circuit interconnect structures | — | 2006-10-03 |
| 7060989 | Method and apparatus for improved processing with a gas-cluster ion beam | David Swenson, Michael E. Mack, Martin D. Tabat, Matthew C. Gwinn | 2006-06-13 |
| 6900129 | CVD of tantalum and tantalum nitride films from tantalum halide precursors | Johannes F. M. Westendorp | 2005-05-31 |
| 6812147 | GCIB processing to improve interconnection vias and improved interconnection via | Wesley Skinner | 2004-11-02 |
| 6413860 | PECVD of Ta films from tanatalum halide precursors | Johannes F. M. Westendorp | 2002-07-02 |
| 6410433 | Thermal CVD of TaN films from tantalum halide precursors | Johannes F. M. Westendorp | 2002-06-25 |
| 6410432 | CVD of integrated Ta and TaNx films from tantalum halide precursors | Johannes F. M. Westendorp | 2002-06-25 |
| 6268288 | Plasma treated thermal CVD of TaN films from tantalum halide precursors | Johannes F. M. Westendorp | 2001-07-31 |
| 6265311 | PECVD of TaN films from tantalum halide precursors | Johannes F. M. Westendorp | 2001-07-24 |