Issued Patents All Time
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7410890 | Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation | Allen R. Kirkpatrick, Sean R. Kirkpatrick, Martin D. Tabat, Thomas G. Tetreault, John Hautala +1 more | 2008-08-12 |
| 7396745 | Formation of ultra-shallow junctions by gas-cluster ion irradiation | John Hautala, Wesley Skinner | 2008-07-08 |
| 7259036 | Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products | John Hautala, Wesley Skinner, Martin D. Tabat | 2007-08-21 |
| 6187643 | Simplified semiconductor device manufacturing using low energy high tilt angle and high energy post-gate ion implantation (PoGI) | — | 2001-02-13 |
| 5821589 | Method for cmos latch-up improvement by mev billi (buried implanted layer for laternal isolation) plus buried layer implantation | — | 1998-10-13 |
| 5814866 | Semiconductor device having at least one field oxide area and CMOS vertically modulated wells (VMW) with a buried implanted layer for lateral isolation having a first portion below a well, a second portion forming another, adjacent well, and a vertical po | — | 1998-09-29 |
| 5501993 | Method of constructing CMOS vertically modulated wells (VMW) by clustered MeV BILLI (buried implanted layer for lateral isolation) implantation | — | 1996-03-26 |
| 4975385 | Method of constructing lightly doped drain (LDD) integrated circuit structure | Israel Beinglass | 1990-12-04 |