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Home › Method of constructing CMOS vertically modulated wells (VMW) by clustered MeV BILLI (buried implanted layer for lateral isolation) implantation

Method of constructing CMOS vertically modulated wells (VMW) by clustered MeV BILLI (buried implanted layer for lateral isolation) implantation

US Patent 5501993 · Granted Mar 26, 1996

Estimated economic value: $1,644,000 ⓘ

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