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Home › Method for cmos latch-up improvement by mev billi (buried implanted layer for laternal isolation) plus buried layer implantation

Method for cmos latch-up improvement by mev billi (buried implanted layer for laternal isolation) plus buried layer implantation

US Patent 5821589 · Granted Oct 13, 1998

Estimated economic value: $310,000 ⓘ

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