Issued Patents All Time
Showing 1,851–1,875 of 1,955 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6159857 | Robust post Cu-CMP IMD process | Chung-Shi Liu | 2000-12-12 |
| 6150272 | Method for making metal plug contacts and metal lines in an insulating layer by chemical/mechanical polishing that reduces polishing-induced damage | Chung-Shi Liu | 2000-11-21 |
| 6143673 | Method for forming gap filling silicon oxide intermetal dielectric (IMD) layer formed employing ozone-tEOS | Syun-Ming Jang, Ying-Ho Chen, Shwangming Jeng | 2000-11-07 |
| 6143657 | Method of increasing the stability of a copper to copper interconnection process and structure manufactured thereby | Chung-Shi Liu | 2000-11-07 |
| 6140241 | Multi-step electrochemical copper deposition process with improved filling capability | Shau-Lin Shue, Ming-Hsing Tsai, Wen-Jye Tsai | 2000-10-31 |
| 6140231 | Robust diffusion barrier for Cu metallization | Chung-Shi Lin, Shau-Lin Shu | 2000-10-31 |
| 6130162 | Method of preparing passivated copper line and device manufactured thereby | Chung-Shi Liu | 2000-10-10 |
| 6130157 | Method to form an encapsulation layer over copper interconnects | Chung-Shi Liu | 2000-10-10 |
| 6121111 | Method of removing tungsten near the wafer edge after CMP | Syun-Ming Jang, Shwangming Jeng | 2000-09-19 |
| 6114253 | Via patterning for poly(arylene ether) used as an inter-metal dielectric | Syun-Ming Jang, Ming-Hsin Huang | 2000-09-05 |
| 6107188 | Passivation method for copper process | Chung-Shi Liu | 2000-08-22 |
| 6100163 | Gap filling of shallow trench isolation by ozone-tetraethoxysilane | Syun-Ming Jang, Ying-Ho Chen | 2000-08-08 |
| 6099701 | AlCu electromigration (EM) resistance | Chung-Shi Liu, Shau-Lin Shue | 2000-08-08 |
| 6096651 | Key-hole reduction during tungsten plug formation | Mei-Yun Wang, Shau-Lin Shue | 2000-08-01 |
| 6083835 | Self-passivation of copper damascene | Shau-Lin Shue | 2000-07-04 |
| 6083829 | Use of a low resistivity Cu.sub.3 Ge interlayer as an adhesion promoter between copper and tin layers | Jane-Bai Lai, Lih-Juann Chen, Chung-Shi Liu | 2000-07-04 |
| 6080657 | Method of reducing AlCu hillocks | Chung-Shi Liu, Shau-Lin Shue | 2000-06-27 |
| 6072237 | Borderless contact structure | Syun-Ming Jang | 2000-06-06 |
| 6049137 | Readable alignment mark structure formed using enhanced chemical mechanical polishing | Syun-Ming Jang, Ying-Ho Chen, Chung-Long Chang | 2000-04-11 |
| 6046108 | Method for selective growth of Cu.sub.3 Ge or Cu.sub.5 Si for passivation of damascene copper structures and device manufactured thereby | Chung-Shi Liu, Tien-I Bao, Syun-Ming Jang | 2000-04-04 |
| 6043136 | Trench filling method employing oxygen densified gap filling CVD silicon oxide layer | Syun-Ming Jang, Ying-Ho Chen | 2000-03-28 |
| 6043133 | Method of photo alignment for shallow trench isolation chemical-mechanical polishing | Syun-Ming Jang, Ying-Ho Chen, Jui-Yu Chang | 2000-03-28 |
| 6037018 | Shallow trench isolation filled by high density plasma chemical vapor deposition | Syun-Ming Jang, Chu-Yun Fu | 2000-03-14 |
| 6037258 | Method of forming a smooth copper seed layer for a copper damascene structure | Chung-Shi Liu | 2000-03-14 |
| 6028367 | Bonds pads equipped with heat dissipating rings and method for forming | — | 2000-02-22 |