Issued Patents All Time
Showing 26–50 of 240 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10734408 | Ferroelectric non-volatile memory | Yangyin Chen, Yukihiro Sakotsubo | 2020-08-04 |
| 10685723 | Reducing read disturb in two-tier memory device by modifying duration of channel discharge based on selected word line | Hong-Yan Chen, Wei Zhao | 2020-06-16 |
| 10650898 | Erase operation in 3D NAND flash memory including pathway impedance compensation | Peter Rabkin, Kwang Ho Kim, Masaaki Higashitani | 2020-05-12 |
| 10636500 | Reducing read disturb in two-tier memory device by modifying ramp up rate of word line voltages during channel discharge | Hong-Yan Chen, Wei Zhao | 2020-04-28 |
| 10636488 | Multi-sensing scan for cross-temperature mitigation | Lei Lin, Wei Zhao, Henry Chin | 2020-04-28 |
| 10559588 | Three-dimensional flat inverse NAND memory device and method of making the same | Yangyin Chen, James Kai | 2020-02-11 |
| 10541035 | Read bias adjustment for compensating threshold voltage shift due to lateral charge movement | Ching-Huang Lu, Han-Ping Chen, Chung-Yao Pai | 2020-01-21 |
| 10522232 | Memory device with vpass step to reduce hot carrier injection type of program disturb | Hong-Yan Chen | 2019-12-31 |
| 10497711 | Non-volatile memory with reduced program speed variation | Ashish Baraskar, Liang Pang, Yanli Zhang, Raghuveer S. Makala | 2019-12-03 |
| 10461095 | Ferroelectric non-volatile memory | Yangyin Chen, Yukihiro Sakotsubo | 2019-10-29 |
| 10453862 | Ferroelectric non-volatile memory | Yangyin Chen, Yukihiro Sakotsubo | 2019-10-22 |
| 10453861 | Ferroelectric non-volatile memory | Yangyin Chen, Yukihiro Sakotsubo | 2019-10-22 |
| 10446244 | Adjusting voltage on adjacent word line during verify of memory cells on selected word line in multi-pass programming | Vinh Diep, Ching-Huang Lu, Zhengyi Zhang | 2019-10-15 |
| 10438671 | Reducing program disturb by modifying word line voltages at interface in two-tier stack during programming | Hong-Yan Chen | 2019-10-08 |
| 10431313 | Grouping memory cells into sub-blocks for program speed uniformity | Zhengyi Zhang, James Kai, Johann Alsmeier | 2019-10-01 |
| 10424387 | Reducing widening of threshold voltage distributions in a memory device due to temperature change | Zhengyi Zhang | 2019-09-24 |
| 10373969 | Three-dimensional memory device including partially surrounding select gates and fringe field assisted programming thereof | Yanli Zhang, Peng Zhang, Johann Alsmeier | 2019-08-06 |
| 10355007 | Three-dimensional memory structure having a back gate electrode | Xiying Costa, Dana Lee, Yanli Zhang, Johann Alsmeier, Akira Matsudaira | 2019-07-16 |
| 10297330 | Separate drain-side dummy word lines within a block to reduce program disturb | Zhengyi Zhang, Henry Chin | 2019-05-21 |
| 10297329 | NAND boosting using dynamic ramping of word line voltages | Peter Rabkin, Masaaki Higashitani | 2019-05-21 |
| 10297323 | Reducing disturbs with delayed ramp up of dummy word line after pre-charge during programming | Xuehong Yu | 2019-05-21 |
| 10283202 | Reducing disturbs with delayed ramp up of selected word line voltage after pre-charge during programming | Hong-Yan Chen | 2019-05-07 |
| 10269435 | Reducing program disturb by modifying word line voltages at interface in two-tier stack after program-verify | Hong-Yan Chen | 2019-04-23 |
| 10249372 | Reducing hot electron injection type of read disturb in 3D memory device during signal switching transients | Hong-Yan Chen, Wei Zhao, Ching-Huang Lu | 2019-04-02 |
| 10217518 | Reducing hot electron injection type of read disturb in 3D memory device having connected source-end select gates | Hong-Yan Chen | 2019-02-26 |