| 12051469 |
Method and apparatus to mitigate hot electron read disturbs in 3D nand devices |
Wei Cao, Richard Fastow, Xin Sun, Hyungseok Kim, Narayanan Ramanan +2 more |
2024-07-30 |
| 11355199 |
Method and apparatus to mitigate hot electron read disturbs in 3D NAND devices |
Wei Cao, Richard Fastow, Xin Sun, Hyungseok Kim, Narayanan Ramanan +2 more |
2022-06-07 |
| 10297323 |
Reducing disturbs with delayed ramp up of dummy word line after pre-charge during programming |
Yingda Dong |
2019-05-21 |
| 10217762 |
Doping channels of edge cells to provide uniform programming speed and reduce read disturb |
Yingda Dong |
2019-02-26 |
| 10068657 |
Detecting misalignment in memory array and adjusting read and verify timing parameters on sub-block and block levels |
Liang Pang, Yingda Dong |
2018-09-04 |
| 10008277 |
Block health monitoring using threshold voltage of dummy memory cells |
Liang Pang, Yingda Dong, Nian Niles Yang |
2018-06-26 |
| 9922992 |
Doping channels of edge cells to provide uniform programming speed and reduce read disturb |
Yingda Dong |
2018-03-20 |
| 9922705 |
Reducing select gate injection disturb at the beginning of an erase operation |
Vinh Diep, Zhengyi Zhang, Yingda Dong |
2018-03-20 |
| 9922714 |
Temperature dependent erase in non-volatile storage |
Yingda Dong |
2018-03-20 |
| 9786378 |
Equalizing erase depth in different blocks of memory cells |
Zhengyi Zhang, Liang Pang, Caifu Zeng, Yingda Dong |
2017-10-10 |
| 9620233 |
Word line ramping down scheme to purge residual electrons |
Yingda Dong, Liang Pang |
2017-04-11 |
| 9607707 |
Weak erase prior to read |
Liang Pang, Yingda Dong, Jingjian Ren |
2017-03-28 |