Issued Patents All Time
Showing 76–100 of 110 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9875929 | Three-dimensional memory device with annular blocking dielectrics and discrete charge storage elements and method of making thereof | Keerti Shukla, Raghuveer S. Makala, Fei Zhou | 2018-01-23 |
| 9842907 | Memory device containing cobalt silicide control gate electrodes and method of making thereof | Raghuveer S. Makala, Sateesh Koka, Zhenyu Lu, Somesh Peri | 2017-12-12 |
| 9842857 | Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices | Sateesh Koka, Raghuveer S. Makala, Srikanth Ranganathan, Mark Juanitas, Johann Alsmeier | 2017-12-12 |
| 9824966 | Three-dimensional memory device containing a lateral source contact and method of making the same | Senaka Kanakamedala, Raghuveer S. Makala, Yanli Zhang, James Kai, Yao-Sheng Lee | 2017-11-21 |
| 9812463 | Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereof | Raghuveer S. Makala, Senaka Kanakamedala, Fei Zhou, Somesh Peri, Masanori Tsutsumi +4 more | 2017-11-07 |
| 9806090 | Vertical floating gate NAND with selectively deposited ALD metal films | Raghuveer S. Makala, Thomas Jongwan Kwon, Senaka Kanakamedala, George Matamis | 2017-10-31 |
| 9806089 | Method of making self-assembling floating gate electrodes for a three-dimensional memory device | Somesh Peri, Raghuveer S. Makala, Yanli Zhang | 2017-10-31 |
| 9793139 | Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word lines | Keerti Shukla, Raghuveer S. Makala, Somesh Peri, Yao-Sheng Lee | 2017-10-17 |
| 9768270 | Method of selectively depositing floating gate material in a memory device | Marika Gunji-Yoneoka, Atsushi Suyama, Kensuke Yamaguchi, Hiroyuki Kinoshita, Raghuveer S. Makala +2 more | 2017-09-19 |
| 9754820 | Three-dimensional memory device containing an aluminum oxide etch stop layer for backside contact structure and method of making thereof | Masanori Tsutsumi, Motoki KAWASAKI | 2017-09-05 |
| 9698152 | Three-dimensional memory structure with multi-component contact via structure and method of making thereof | Somesh Peri, Sateesh Koka, Raghuveer S. Makala, Matthias Baenninger, Jayavel Pachamuthu +1 more | 2017-07-04 |
| 9698223 | Memory device containing stress-tunable control gate electrodes | Raghuveer S. Makala, George Matamis | 2017-07-04 |
| 9691884 | Monolithic three dimensional NAND strings and methods of fabrication thereof | Raghuveer S. Makala, Yanli Zhang, Yao-Sheng Lee, Senaka Kanakamedala, George Matamis +1 more | 2017-06-27 |
| 9659955 | Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structure | Sateesh Koka, Raghuveer S. Makala, Somesh Peri, Senaka Kanakamedala | 2017-05-23 |
| 9646990 | NAND memory strings and methods of fabrication thereof | Sateesh Koka, Raghuveer S. Makala, Yanli Zhang, Senaka Kanakamedala, Yao-Sheng Lee +1 more | 2017-05-09 |
| 9613977 | Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices | Sateesh Koka, Raghuveer S. Makala, Srikanth Ranganathan, Mark Juanitas, Johann Alsmeier | 2017-04-04 |
| 9576966 | Cobalt-containing conductive layers for control gate electrodes in a memory structure | Somesh Peri, Raghuveer S. Makala, Sateesh Koka | 2017-02-21 |
| 9570455 | Metal word lines for three dimensional memory devices | Raghuveer S. Makala, Senaka Kanakamedala, Sateesh Koka, Yao-Sheng Lee, George Matamis | 2017-02-14 |
| 9530785 | Three-dimensional memory devices having a single layer channel and methods of making thereof | Sateesh Koka, Zhenyu Lu, Wei Zhao, Ching-Huang Lu, Henry Chien +6 more | 2016-12-27 |
| 9524977 | Metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure | Raghuveer S. Makala, Sateesh Koka, Tomohiro Kubo, Junichi Ariyoshi, George Matamis | 2016-12-20 |
| 9515079 | Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attack | Sateesh Koka, Raghuveer S. Makala, Somesh Peri, Yao-Sheng Lee, George Matamis +1 more | 2016-12-06 |
| 9496419 | Ruthenium nucleation layer for control gate electrodes in a memory structure | Raghuveer S. Makala, Sateesh Koka, George Matamis | 2016-11-15 |
| 9484357 | Selective blocking dielectric formation in a three-dimensional memory structure | Raghuveer S. Makala, Senaka Kanakamedala, Xiaofeng Liang, George Matamis, Sateesh Koka +1 more | 2016-11-01 |
| 9478558 | Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layer | Sateesh Koka, Senaka Kanakamedala, Raghuveer S. Makala, Yanli Zhang, Yao-Sheng Lee +1 more | 2016-10-25 |
| 9397046 | Fluorine-free word lines for three-dimensional memory devices | Raghuveer S. Makala, Sateesh Koka, George Matamis | 2016-07-19 |