Issued Patents All Time
Showing 51–75 of 110 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10804291 | Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same | Adarsh Rajashekhar, Fei Zhou, Raghuveer S. Makala | 2020-10-13 |
| 10797061 | Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same | Akio Nishida, Toshihiro Iizuka, Raghuveer S. Makala, Adarsh Rajashekhar, Fei Zhou +1 more | 2020-10-06 |
| 10797060 | Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same | Raghuveer S. Makala, Adarsh Rajashekhar, Fei Zhou, Srikanth Ranganathan, Akio Nishida +1 more | 2020-10-06 |
| 10790300 | Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same | Adarsh Rajashekhar, Raghuveer S. Makala, Fei Zhou | 2020-09-29 |
| 10756110 | Method of forming seamless drain-select-level electrodes for a three-dimensional memory device and structures formed by the same | Raghuveer S. Makala, Adarsh Rajashekhar, Fei Zhou | 2020-08-25 |
| 10741572 | Three-dimensional memory device having multilayer word lines containing selectively grown cobalt or ruthenium and method of making the same | Raghuveer S. Makala, Yanli Zhang, Yao-Sheng Lee | 2020-08-11 |
| 10665581 | Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same | Fei Zhou, Raghuveer S. Makala, Adarsh Rajashekhar | 2020-05-26 |
| 10651196 | Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making same | Fei Zhou, Raghuveer S. Makala, Adarsh Rajashekhar | 2020-05-12 |
| 10622368 | Three-dimensional memory device with semicircular metal-semiconductor alloy floating gate electrodes and methods of making thereof | Senaka Kanakamedala, Raghuveer S. Makala, Somesh Peri, Yao-Sheng Lee, James Kai | 2020-04-14 |
| 10615123 | Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same | Tatsuya Hinoue, Tomoyuki Obu, Tomohiro Uno, Yusuke Mukae, Raghuveer S. Makala +2 more | 2020-04-07 |
| 10529620 | Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same | Raghuveer S. Makala, Fei Zhou, Adarsh Rajashekhar, Senaka Kanakamedala, Fumitaka Amano +1 more | 2020-01-07 |
| 10381364 | Three-dimensional memory device including vertically offset drain select level layers and method of making thereof | Fei Zhou, Yanli Zhang, Raghuveer S. Makala, Senaka Kanakamedala | 2019-08-13 |
| 10381409 | Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same | Fei Zhou, Raghuveer S. Makala, Christopher J. Petti, Adarsh Rajashekhar, Seung-Yeul Yang | 2019-08-13 |
| 10381559 | Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same | Fei Zhou, Raghuveer S. Makala, Christopher J. Petti, Adarsh Rajashekhar, Seung-Yeul Yang | 2019-08-13 |
| 10361213 | Three dimensional memory device containing multilayer wordline barrier films and method of making thereof | Fumitaka Amano, Raghuveer S. Makala, Fei Zhou, Keerti Shukla | 2019-07-23 |
| 10355139 | Three-dimensional memory device with amorphous barrier layer and method of making thereof | Raghuveer S. Makala, Keerti Shukla, Fei Zhou, Somesh Peri | 2019-07-16 |
| 10290652 | Three-dimensional memory device with graded word lines and methods of making the same | Raghuveer S. Makala, Fei Zhou, Adarsh Rajashekhar | 2019-05-14 |
| 10290648 | Three-dimensional memory device containing air gap rails and method of making thereof | Fei Zhou, Raghuveer S. Makala, Adarsh Rajashekhar | 2019-05-14 |
| 10283513 | Three-dimensional memory device with annular blocking dielectrics and method of making thereof | Fei Zhou, Raghuveer S. Makala, Adarsh Rajashekhar | 2019-05-07 |
| 10276583 | Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof | Fumitaka Amano, Raghuveer S. Makala, Adarsh Rajashekhar, Fei Zhou | 2019-04-30 |
| 10128261 | Cobalt-containing conductive layers for control gate electrodes in a memory structure | Raghuveer S. Makala, Sateesh Koka, Genta Mizuno, Naoki Takeguchi, Senaka Kanakamedala +3 more | 2018-11-13 |
| 10050054 | Three-dimensional memory device having drain select level isolation structure and method of making thereof | Yanli Zhang, Johann Alsmeier, Raghuveer S. Makala, Senaka Kanakamedala, James Kai | 2018-08-14 |
| 9984963 | Cobalt-containing conductive layers for control gate electrodes in a memory structure | Somesh Peri, Raghuveer S. Makala, Senaka Kanakamedala, Keerti Shukla | 2018-05-29 |
| 9960180 | Three-dimensional memory device with partially discrete charge storage regions and method of making thereof | Fei Zhou, Raghuveer S. Makala, Keerti Shukla, Yanli Zhang, Peng Zhang | 2018-05-01 |
| 9893081 | Ridged word lines for increasing control gate lengths in a three-dimensional memory device | Senaka Kanakamedala, Raghuveer S. Makala, Somesh Peri, Yao-Sheng Lee | 2018-02-13 |