SV

Suresh Venkatesan

PT Poet Technologies: 19 patents #1 of 12Top 9%
Globalfoundries: 13 patents #279 of 4,424Top 7%
Motorola: 12 patents #718 of 12,470Top 6%
FS Freeescale Semiconductor: 6 patents #539 of 3,767Top 15%
GU Globalfoundries U.S.: 2 patents #206 of 665Top 35%
PF Purdue Research Foundation: 2 patents #773 of 3,174Top 25%
📍 Los Gatos, CA: #85 of 2,986 inventorsTop 3%
🗺 California: #4,640 of 386,348 inventorsTop 2%
Overall (All Time): #30,422 of 4,157,543Top 1%
68
Patents All Time

Issued Patents All Time

Showing 51–68 of 68 patents

Patent #TitleCo-InventorsDate
7678665 Deep STI trench and SOI undercut enabling STI oxide stressor Michael D. Turner, Kurt H. Junker 2010-03-16
7456055 Process for forming an electronic device including semiconductor fins Marius Orlowski 2008-11-25
7288448 Method and apparatus for mobility enhancement in a semiconductor device Marius Orlowski 2007-10-30
7078297 Memory with recessed devices James D. Burnett 2006-07-18
6713381 Method of forming semiconductor device including interconnect barrier layers Alexander L. Barr, David B. Clegg, Rebecca G. Cole, Olubunmi O. Adetutu, Stuart E. Greer +5 more 2004-03-30
6573173 Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process János Farkas, Brian G. Anthony, Abbas Guvenilir, Mohammed Rabiul Islam, Venkat R. Kolagunta +2 more 2003-06-03
6551919 Method for forming a dual inlaid copper interconnect structure Bradley P. Smith, Mohammed Rabiul Islam 2003-04-22
6444569 Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process János Farkas, Brian G. Anthony, Abbas Guvenilir, Mohammed Rabiul Islam, Venkat R. Kolagunta +2 more 2002-09-03
6362057 Method for forming a semiconductor device William J. Taylor, Jr., Asanga H. Perera 2002-03-26
6326301 Method for forming a dual inlaid copper interconnect structure Bradley P. Smith, Mohammed Rabiul Islam 2001-12-04
6274478 Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process János Farkas, Brian G. Anthony, Abbas Guvenilir, Mohammed Rabiul Islam, Venkat R. Kolagunta +2 more 2001-08-14
5960270 Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions Veena Misra, Christopher C. Hobbs, Brad Smith, Jeffrey S. Cope, Earnest B. Wilson 1999-09-28
5736435 Process for fabricating a fully self-aligned soi mosfet Stephen S. Poon, Jeffrey W. Lutze, Sergio A. Ajuria 1998-04-07
5627097 Method for making CMOS device having reduced parasitic capacitance Stephen S. Poon, Jeffrey W. Lutze 1997-05-06
5554870 Integrated circuit having both vertical and horizontal devices and process for making the same Jon T. Fitch, Keith E. Witek 1996-09-10
5459096 Process for fabricating a semiconductor device using dual planarization layers Stephen S. Poon 1995-10-17
5349228 Dual-gated semiconductor-on-insulator field effect transistor Gerold W. Neudeck 1994-09-20
5273921 Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor Gerold W. Neudeck 1993-12-28