Issued Patents All Time
Showing 51–68 of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7196008 | Aluminum oxide as liner or cover layer to spacers in memory device | Hidehiko Shiraiwa, Satoshi Torii, Joong S. Jeon | 2007-03-27 |
| 7151293 | SONOS memory with inversion bit-lines | Hidehiko Shiraiwa, Satoshi Torii, Hideki Arakawa, Masaru Yano | 2006-12-19 |
| 7067377 | Recessed channel with separated ONO memory device | Hidehiko Shiraiwa, Satoshi Torii, Mark T. Ramsbey | 2006-06-27 |
| 7052961 | Method for forming wordlines having irregular spacing in a memory array | Hidehiko Shiraiwa, Jean Y. Yang, Cyrus E. Tabery | 2006-05-30 |
| 7033957 | ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices | Hidehiko Shiraiwa, Tazrien Kamal, Mark T. Ramsbey, Inkuk Kang, Rinji Sugino +4 more | 2006-04-25 |
| 7018868 | Disposable hard mask for memory bitline scaling | Jean Y. Yang, Jeff P. Erhardt, Cyrus E. Tabery, Weidong Qian, Mark T. Ramsbey +1 more | 2006-03-28 |
| 7018896 | UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processing | Minh Van Ngo, Tazrien Kamal, Mark T. Ramsbey, Arvind Halliyal, Ning Cheng +6 more | 2006-03-28 |
| 6969886 | ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices | Hidehiko Shiraiwa, Arvind Halliyal, Jean Y. Yang, Inkuk Kang, Tazrien Kamal +1 more | 2005-11-29 |
| 6958511 | Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen | Arvind Halliyal, Amir H. Jafarpour, Hidehiko Shiraiwa, Tazrien Kamal, Mark T. Ramsbey | 2005-10-25 |
| 6949433 | Method of formation of semiconductor resistant to hot carrier injection stress | Shiraiwa Hidehiko, Arvind Halliyal | 2005-09-27 |
| 6927145 | Bitline hard mask spacer flow for memory cell scaling | Jean Y. Yang, Mark T. Ramsbey, Tazrien Kamal, Emmanuil H. Lingunis | 2005-08-09 |
| 6894342 | Structure and method for preventing UV radiation damage in a memory cell and improving contact CD control | Angela T. Hui, Minh Van Ngo, Ning Cheng, Jean Y. Yang, Hirokazu Tokuno +2 more | 2005-05-17 |
| 6855608 | Method of fabricating a planar structure charge trapping memory cell array with rectangular gates and reduced bit line resistance | Mark T. Ramsbey, Mark Randolph, Jean Y. Yang, Hiroyuki Kinoshita, Cyrus E. Tabery +3 more | 2005-02-15 |
| 6833581 | Structure and method for preventing process-induced UV radiation damage in a memory cell | Angela T. Hui, Minh Van Ngo, Ning Cheng, Jean Y. Yang, Kouros Ghandehari +1 more | 2004-12-21 |
| 6803275 | ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices | Hidehiko Shiraiwa, Arvind Halliyal, Jean Y. Yang, Inkuk Kang, Tazrien Kamal +1 more | 2004-10-12 |
| 6774432 | UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL | Minh Van Ngo, Tazrien Kamal, Mark T. Ramsbey, Arvind Halliyal, Ning Cheng +6 more | 2004-08-10 |
| 6765254 | Structure and method for preventing UV radiation damage and increasing data retention in memory cells | Angela T. Hui, Minh Van Ngo, Ning Cheng, Jean Y. Yang, Hidehiko Shiraiwa +3 more | 2004-07-20 |
| 6740605 | Process for reducing hydrogen contamination in dielectric materials in memory devices | Hidehiko Shiraiwa, Fred Cheung, Arvind Halliyal | 2004-05-25 |