Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11081583 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Eric C. Harley, Judson R. Holt, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo | 2021-08-03 |
| 10615279 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Eric C. Harley, Judson R. Holt, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo | 2020-04-07 |
| 10243077 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Eric C. Harley, Judson R. Holt, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo | 2019-03-26 |
| 9917190 | FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Eric C. Harley, Judson R. Holt, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo | 2018-03-13 |
| 9875939 | Methods of forming uniform and pitch independent fin recess | Alexander Reznicek, Benjamin G. Moser, Dominic J. Schepis, Melissa A. Smith, Henry K. Utomo +2 more | 2018-01-23 |
| 9752251 | Self-limiting selective epitaxy process for preventing merger of semiconductor fins | Kevin K. Chan, Eric C. Harley, Annie Levesque | 2017-09-05 |
| 9685334 | Methods of forming semiconductor fin with carbon dopant for diffusion control | Mohammad Hasanuzzaman, Benjamin G. Moser, Shahrukh Khan, Sean M. Polvino | 2017-06-20 |
| 9634084 | Conformal buffer layer in source and drain regions of fin-type transistors | Christopher D. Sheraw, Chengwen Pei, Eric T. Harley, Henry K. Utomo, Yinxiao Yang +1 more | 2017-04-25 |
| 9577100 | FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions | Kangguo Cheng, Michael P. Chudzik, Eric C. Harley, Judson R. Holt, Rishikesh Krishnan +2 more | 2017-02-21 |
| 9577099 | Diamond shaped source drain epitaxy with underlying buffer layer | Veeraraghavan S. Basker, Eric C. Harley, Alexander Reznicek, Henry K. Utomo | 2017-02-21 |
| 9536985 | Epitaxial growth of material on source/drain regions of FinFET structure | Michael P. Chudzik, Brian J. Greene, Eric C. Harley, Judson R. Holt, Rishikesh Krishnan +2 more | 2017-01-03 |
| 9466616 | Uniform junction formation in FinFETs | Eric C. Harley, Judson R. Holt, Timothy J. McArdle, Shogo Mochizuki, Alexander Reznicek | 2016-10-11 |
| 9349649 | Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs | Kevin K. Chan, Annie Levesque, Dae-Gyu Park, Ravikumar Ramachandran, Amanda L. Tessier +1 more | 2016-05-24 |
| 9349650 | Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs | Kevin K. Chan, Annie Levesque, Dae-Gyu Park, Ravikumar Ramachandran, Amanda L. Tessier +1 more | 2016-05-24 |
| 9318608 | Uniform junction formation in FinFETs | Eric C. Harley, Judson R. Holt, Timothy J. McArdle, Shogo Mochizuki, Alexander Reznicek | 2016-04-19 |
| 9312364 | finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Eric C. Harley, Judson R. Holt, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo | 2016-04-12 |
| 9287264 | Epitaxially grown silicon germanium channel FinFET with silicon underlayer | Kangguo Cheng, Eric C. Harley, Judson R. Holt, Gauri Karve, Derrick Liu +4 more | 2016-03-15 |
| 9246003 | FINFET structures with fins recessed beneath the gate | Kangguo Cheng, Eric C. Harley, Ali Khakifirooz, Alexander Reznicek | 2016-01-26 |
| 9123826 | Single crystal source-drain merged by polycrystalline material | Eric C. Harley, Judson R. Holt, Rishikesh Krishnan, Timothy J. McArdle, Alexander Reznicek +1 more | 2015-09-01 |
| 9075135 | Reporting connection failure | Xiang Ye Kong, Shaohua Li, Binqi Zhang | 2015-07-07 |