Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11164954 | Gate capping layers of semiconductor devices | Sipeng Gu, Zhiguo Sun, Guoliang Zhu | 2021-11-02 |
| 10910276 | STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method | Yongjun Shi, Chun Yu Wong, Hongliang Shen, Baofu Zhu | 2021-02-02 |
| 10818557 | Integrated circuit structure to reduce soft-fail incidence and method of forming same | Sipeng Gu, Akshey Sehgal, Sunil Kumar Singh, Ravi Prakash Srivastava, Haiting Wang +1 more | 2020-10-27 |
| 10714380 | Method of forming smooth sidewall structures using spacer materials | Ravi Prakash Srivastava, Sipeng Gu, Sunil Kumar Singh, Akshey Sehgal, Zhiguo Sun | 2020-07-14 |
| 10643900 | Method to reduce FinFET short channel gate height | Hong Yu, Zhenyu Hu, Xing Zhang | 2020-05-05 |
| 10580857 | Method to form high performance fin profile for 12LP and above | Yanzhen Wang, Hongliang Shen, Sipeng Gu | 2020-03-03 |
| 10522679 | Selective shallow trench isolation (STI) fill for stress engineering in semiconductor structures | Ashish Jha, Hong Yu, Xusheng Wu, Dongil Choi, Edmund K. Banghart +1 more | 2019-12-31 |
| 10347531 | Middle of the line (MOL) contact formation method and structure | Sipeng Gu, Xusheng Wu, Xiaobo Chen, Guoliang Zhu, Wenhe Lin +1 more | 2019-07-09 |
| 10153211 | Methods, apparatus, and system for fabricating finFET devices with increased breakdown voltage | Yanzhen Wang, Sipeng Gu | 2018-12-11 |
| 10090382 | Integrated circuit structure including single diffusion break and end isolation region, and methods of forming same | Hong Yu, Hui Zhan, Zhenyu Hu | 2018-10-02 |
| 10083873 | Semiconductor structure with uniform gate heights | Xing Zhang, Hong Yu, Zhenyu Hu | 2018-09-25 |
| 10074732 | Methods of forming short channel and long channel finFET devices so as to adjust threshold voltages | Hui Zang, Hong Yu, Yanzhen Wang | 2018-09-11 |
| 10043713 | Method to reduce FinFET short channel gate height | Hong Yu, Zhenyu Hu, Xing Zhang | 2018-08-07 |
| 10014296 | Fin-type field effect transistors with single-diffusion breaks and method | Hong Yu, Sipeng Gu, Yanzhen Wang | 2018-07-03 |
| 9831098 | Methods for fabricating integrated circuits using flowable chemical vapor deposition techniques with low-temperature thermal annealing | Sukwon Hong, Satyajit Shinde, Sandeep Gaan, Tao Han, Carlos M. Chacon +1 more | 2017-11-28 |