Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8432035 | Metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices | Christof Streck | 2013-04-30 |
| 8384217 | Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride | Christof Streck | 2013-02-26 |
| 8222135 | Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride | Christof Streck | 2012-07-17 |
| 8211795 | Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatment | Joerg Hohage, Hartmut Ruelke, Ulrich Mayer | 2012-07-03 |
| 8124532 | Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer | Christof Streck, Alexander Hanke | 2012-02-28 |
| 8105943 | Enhancing structural integrity and defining critical dimensions of metallization systems of semiconductor devices by using ALD techniques | Christof Streck, John A. Iacoponi | 2012-01-31 |
| 8084354 | Method of fabricating a metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices | Christof Streck | 2011-12-27 |
| 7867917 | Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticity | Joerg Hohage, Matthias Lehr | 2011-01-11 |
| 7829460 | Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride | Christof Streck | 2010-11-09 |
| 7687398 | Technique for forming nickel silicide by depositing nickel from a gaseous precursor | Christof Streck, Alexander Hanke | 2010-03-30 |
| 7678699 | Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction | Joerg Hohage, Matthias Lehr | 2010-03-16 |
| 7638428 | Semiconductor structure and method of forming the same | Christof Streck | 2009-12-29 |
| 7595269 | Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer | Christof Streck, Alexander Hanke | 2009-09-29 |
| 7544551 | Technique for strain engineering in Si-based Transistors by using embedded semiconductor layers including atoms with high covalent radius | Christof Streck, Alexander Hanke | 2009-06-09 |
| 7491638 | Method of forming an insulating capping layer for a copper metallization layer | Joerg Hohage, Matthias Lehr | 2009-02-17 |
| 7476626 | Etch stop layer for a metallization layer with enhanced etch selectivity and hermeticity | Joerg Hohage, Matthias Lehr | 2009-01-13 |
| 7442638 | Method for forming a tungsten interconnect structure with enhanced sidewall coverage of the barrier layer | Kai Frohberg, Katja Huy | 2008-10-28 |
| 7413985 | Method for forming a self-aligned nitrogen-containing copper silicide capping layer in a microstructure device | Christof Streck | 2008-08-19 |
| 7384877 | Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidation | Christof Streck, Patrick Press | 2008-06-10 |
| 7071096 | Method of forming a conductive barrier layer within critical openings by a final deposition step after a re-sputter deposition | Michael Friedemann | 2006-07-04 |
| 7063091 | Method for cleaning the surface of a substrate | Frank Koschinsky, Peter Huebler | 2006-06-20 |
| 6984294 | Method of forming a conductive barrier layer having improved coverage within critical openings | Michael Friedemann | 2006-01-10 |
| 6841468 | Method of forming a conductive barrier layer having improve adhesion and resistivity characteristics | Michael Friedemann | 2005-01-11 |
| 6716650 | Interface void monitoring in a damascene process | Eckhard Langer, Frank Koschinsky, Peter Hübler | 2004-04-06 |
| 6613660 | Metallization process sequence for a barrier metal layer | Frank Koschinsky, Peter Hübler | 2003-09-02 |