Issued Patents All Time
Showing 25 most recent of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6167834 | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more | 2001-01-02 |
| RE36623 | Process for PECVD of silicon oxide using TEOS decomposition | John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more | 2000-03-21 |
| 6040022 | PECVD of compounds of silicon from silane and nitrogen | Mei Chang, John M. White, Dan Maydan | 2000-03-21 |
| 6020270 | Bomine and iodine etch process for silicon and silicides | Jerry Wong, Mei Chang, Alfred Mak, Dan Maydan | 2000-02-01 |
| 5882165 | Multiple chamber integrated process system | Dan Maydan, Sasson Somekh, David Cheng, Masato Toshima, Isaac Harari +1 more | 1999-03-16 |
| 5874362 | Bromine and iodine etch process for silicon and silicides | Jerry Wong, Mei Chang, Alfred Mak, Dan Maydan | 1999-02-23 |
| 5871811 | Method for protecting against deposition on a selected region of a substrate | John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1999-02-16 |
| 5773100 | PECVD of silicon nitride films | Mei Chang, John M. White, Dan Maydan | 1998-06-30 |
| 5755886 | Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing | John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1998-05-26 |
| 5362526 | Plasma-enhanced CVD process using TEOS for depositing silicon oxide | John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1994-11-08 |
| 5354715 | Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1994-10-11 |
| 5354387 | Boron phosphorus silicate glass composite layer on semiconductor wafer | Peter Wai-Man Lee, Makoto Nagashima, Kazuto Fukuma, Tetsuya Sato | 1994-10-11 |
| 5314845 | Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer | Peter Wai-Man Lee, Makoto Nagashima, Kazuto Fukuma, Tatsuya Sato | 1994-05-24 |
| 5300460 | UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers | Kenneth S. Collins, Craig A. Roderick, Chan-Lon Yang, Dan Maydan | 1994-04-05 |
| 5292393 | Multichamber integrated process system | Dan Maydan, Sasson Somekh, David Cheng, Masato Toshima, Isaac Harari +1 more | 1994-03-08 |
| 5244841 | Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing | Jeffrey Marks, Kam S. Law, Dan Maydan | 1993-09-14 |
| 5219485 | Materials and methods for etching silicides, polycrystalline silicon and polycides | Mei Chang, T. K. Leong, deceased, Peter Leong | 1993-06-15 |
| 5215619 | Magnetic field-enhanced plasma etch reactor | David Cheng, Dan Maydan, Sasson Somekh, Kenneth R. Stalder, Dana L. Andrews +4 more | 1993-06-01 |
| 5213650 | Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer | Lawrence Chung-Lai Lei, Mei Chang, Cissy Leung | 1993-05-25 |
| 5210466 | VHF/UHF reactor system | Kenneth S. Collins, Craig A. Roderick, Chan-Lon Yang, Dan Maydan | 1993-05-11 |
| 5204288 | Method for planarizing an integrated circuit structure using low melting inorganic material | Jeffrey Marks, Kam S. Law, Dan Maydan | 1993-04-20 |
| 5166101 | Method for forming a boron phosphorus silicate glass composite layer on a semiconductor wafer | Peter Wai-Man Lee, Makoto Nagashima, Kazuto Fukuma, Tetsuya Sato | 1992-11-24 |
| 5112435 | Materials and methods for etching silicides, polycrystalline silicon and polycides | Mei Cheng, Toung K. Leong, deceased | 1992-05-12 |
| 5112776 | Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing | Jeffrey Marks, Kam S. Law, Dan Mayden | 1992-05-12 |
| 5075256 | Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer | Lawrence Chung-Lai Lei, Mei Chang, Cissy Leung | 1991-12-24 |