Issued Patents All Time
Showing 26–42 of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6841413 | Thinned die integrated circuit package | Cheng-Yi Liu, Johanna M. Swan | 2005-01-11 |
| 6838299 | Forming defect prevention trenches in dicing streets | Rose Mulligan, Jun He, Thomas Marieb, Susanne Menezes | 2005-01-04 |
| 6834133 | Optoelectronic packages and methods to simultaneously couple an optoelectronic chip to a waveguide and substrate | Daoqiang Lu | 2004-12-21 |
| 6806168 | Healing of micro-cracks in an on-chip dielectric | Anna George | 2004-10-19 |
| 6792179 | Optical thumbtack | Daoqiang Lu, Gilroy Vandentop, Henning Braunisch | 2004-09-14 |
| 6770575 | Method for improving thermal stability of fluorinated amorphous carbon low dielectric constant materials | — | 2004-08-03 |
| 6762435 | Semiconductor device with boron containing carbon doped silicon oxide layer | — | 2004-07-13 |
| 6734534 | Microelectronic substrate with integrated devices | Quat Vu, Jian Li | 2004-05-11 |
| 6709898 | Die-in-heat spreader microelectronic package | Qing Ma, Harry Fujimoto, John E. Evert | 2004-03-23 |
| 6706553 | Dispensing process for fabrication of microelectronic packages | John Cuendet, Kyle M. Johnson | 2004-03-16 |
| 6610362 | Method of forming a carbon doped oxide layer on a substrate | — | 2003-08-26 |
| 6593650 | Plasma induced depletion of fluorine from surfaces of fluorinated low-k dielectric materials | Ebrahim Andideh, Lawrence Wong | 2003-07-15 |
| 6586276 | Method for fabricating a microelectronic device using wafer-level adhesion layer deposition | Hajime Sakamoto, Dongdong Wang | 2003-07-01 |
| 6555906 | Microelectronic package having a bumpless laminated interconnection layer | Paul H. Wermer | 2003-04-29 |
| 6518171 | Dual damascene process using a low k interlayer for forming vias and trenches | — | 2003-02-11 |
| 6489185 | Protective film for the fabrication of direct build-up layers on an encapsulated die package | Paul A. Koning | 2002-12-03 |
| 6436822 | Method for making a carbon doped oxide dielectric material | — | 2002-08-20 |