Issued Patents All Time
Showing 151–175 of 195 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9219135 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yin Jin, Matthew V. Metz, Jack T. Kavalieros, Marko Radosavljevic +5 more | 2015-12-22 |
| 9219079 | Group III-N transistor on nanoscale template structures | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung +1 more | 2015-12-22 |
| 9209290 | III-N material structure for gate-recessed transistors | Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty +2 more | 2015-12-08 |
| 9159823 | Strain compensation in transistors | Van H. Le, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros | 2015-10-13 |
| 9153671 | Techniques for forming non-planar germanium quantum well devices | Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Marko Radosavljevic +4 more | 2015-10-06 |
| 9136343 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2015-09-15 |
| 9123790 | Contact techniques and configurations for reducing parasitic resistance in nanowire transistors | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Gilbert Dewey, Niloy Mukherjee +3 more | 2015-09-01 |
| 9123567 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more | 2015-09-01 |
| 9112028 | Methods of containing defects for non-silicon device engineering | Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady +6 more | 2015-08-18 |
| 9048266 | Apparatus and methods for improving parallel conduction in a quantum well device | Ravi Pillarisetty, Mantu K. Hudait, Been-Yih Jin, Robert S. Chau | 2015-06-02 |
| 9018680 | Non-planar semiconductor device having active region with multi-dielectric gate stack | Gilbert Dewey, Marko Radosavljevic, Ravi Pillarisetty, Niloy Mukherjee | 2015-04-28 |
| 8987091 | III-N material structure for gate-recessed transistors | Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty +2 more | 2015-03-24 |
| 8954021 | Group III-N transistors on nanoscale template structures | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung +1 more | 2015-02-10 |
| 8896101 | Nonplanar III-N transistors with compositionally graded semiconductor channels | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung, Sanaz K. Gardner +1 more | 2014-11-25 |
| 8890118 | Tunnel field effect transistor | Gilbert Dewey, Marko Radosavljevic, Niloy Mukherjee | 2014-11-18 |
| 8890120 | Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs | Roza Kotlyar, Stephen M. Cea, Gilbert Dewey, Uygar E. Avci, Rafael Rios +4 more | 2014-11-18 |
| 8883573 | Isolation for nanowire devices | Uday Shah, Been-Yih Jin, Ravi Pillarisetty, Marko Radosavljevic, Willy Rachmady | 2014-11-11 |
| 8872225 | Defect transferred and lattice mismatched epitaxial film | Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey, Niti Goel +8 more | 2014-10-28 |
| 8872160 | Increasing carrier injection velocity for integrated circuit devices | Marko Radosavljevic, Gilbert Dewey, Niloy Mukherjee | 2014-10-28 |
| 8853067 | Method of isolating nanowires from a substrate | Uday Shah, Ravi Pillarisetty, Been-Yin Jin, Marko Radosavljevic, Willy Rachmady | 2014-10-07 |
| 8823059 | Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack | Gilbert Dewey, Marko Radosavljevic, Ravi Pillarisetty, Niloy Mukherjee | 2014-09-02 |
| 8809836 | Techniques for forming contacts to quantum well transistors | Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Jack T. Kavalieros, Willy Rachmady +2 more | 2014-08-19 |
| 8785907 | Epitaxial film growth on patterned substrate | Niti Goel, Niloy Mukherjee, Seung Hoon Sung, Van H. Le, Matthew V. Metz +11 more | 2014-07-22 |
| 8785909 | Non-planar semiconductor device having channel region with low band-gap cladding layer | Marko Radosavljevic, Gilbert Dewey, Dipanjan Basu, Sanaz K. Gardner, Satyarth Suri +4 more | 2014-07-22 |
| 8768271 | Group III-N transistors on nanoscale template structures | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung +1 more | 2014-07-01 |