Issued Patents All Time
Showing 126–150 of 195 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9653548 | Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack | Gilbert Dewey, Marko Radosavljevic, Ravi Pillarisetty, Niloy Mukherjee | 2017-05-16 |
| 9640422 | III-N devices in Si trenches | Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung, Marko Radosavljevic +3 more | 2017-05-02 |
| 9640671 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2017-05-02 |
| 9640622 | Selective epitaxially grown III-V materials based devices | Niti Goel, Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic +2 more | 2017-05-02 |
| 9640537 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Niti Goel, Robert S. Chau, Jack T. Kavalieros, Matthew V. Metz, Niloy Mukherjee +7 more | 2017-05-02 |
| 9614093 | Strain compensation in transistors | Van H. Le, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros | 2017-04-04 |
| 9583396 | Making a defect free fin based device in lateral epitaxy overgrowth region | Niti Goel, Sansaptak Dasgupta, Niloy Mukherjee, Matthew V. Metz, Van H. Le +3 more | 2017-02-28 |
| 9583602 | Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs | Roza Kotlyar, Stephen M. Cea, Gilbert Dewey, Uygar E. Avci, Rafael Rios +4 more | 2017-02-28 |
| 9570614 | Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more | 2017-02-14 |
| 9530878 | III-N material structure for gate-recessed transistors | Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty +2 more | 2016-12-27 |
| 9478635 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Matthew V. Metz, Jack T. Kavalieros, Marko Radosavljevic +5 more | 2016-10-25 |
| 9461141 | Contact techniques and configurations for reducing parasitic resistance in nanowire transistors | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Gilbert Dewey, Niloy Mukherjee +3 more | 2016-10-04 |
| 9461160 | Non-planar III-N transistor | Han Wui Then, Robert S. Chau, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2016-10-04 |
| 9412872 | N-type and P-type tunneling field effect transistors (TFETs) | Roza Kotlyar, Stephen M. Cea, Gilbert Dewey, Uygar E. Avci, Rafael Rios +4 more | 2016-08-09 |
| 9397188 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2016-07-19 |
| 9391181 | Lattice mismatched hetero-epitaxial film | Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey, Niti Goel +8 more | 2016-07-12 |
| 9373693 | Nonplanar III-N transistors with compositionally graded semiconductor channels | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung, Sanaz K. Gardner +1 more | 2016-06-21 |
| 9362369 | Group III-N transistors on nanoscale template structures | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung +1 more | 2016-06-07 |
| 9356099 | Techniques for forming contacts to quantum well transistors | Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Jack T. Kavalieros, Willy Rachmady +2 more | 2016-05-31 |
| 9343574 | Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack | Gilbert Dewey, Marko Radosavljevic, Ravi Pillarisetty, Niloy Mukherjee | 2016-05-17 |
| 9337291 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2016-05-10 |
| 9306068 | Stain compensation in transistors | Van H. Le, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros | 2016-04-05 |
| 9263557 | Techniques for forming non-planar germanium quantum well devices | Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Marko Radosavljevic +4 more | 2016-02-16 |
| 9245989 | High voltage field effect transistors | Han Wui Then, Robert S. Chau, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2016-01-26 |
| 9240410 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2016-01-19 |