Issued Patents All Time
Showing 26–50 of 89 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10872957 | Semiconductor device with needle-shaped field plate structures | Ralf Siemieniec, Franz Hirler, Michael Hutzler, David Laforet, Cedric Ouvrard +1 more | 2020-12-22 |
| 10868172 | Vertical power devices with oxygen inserted Si-layers | Thomas Feil, Maximilian Roesch, Martin Poelzl, Robert Haase, Sylvain Leomant +2 more | 2020-12-15 |
| 10868173 | Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof | Cedric Ouvrard, Adam Amali, Michael Hutzler, David Laforet, Harsh Naik +2 more | 2020-12-15 |
| 10811531 | Transistor device with gate resistor | David Laforet, Cesar Augusto Braz, Gerhard Noebauer, Cedric Ouvrard | 2020-10-20 |
| 10727331 | Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof | Cedric Ouvrard, Adam Amali, Michael Hutzler, David Laforet, Harsh Naik +2 more | 2020-07-28 |
| 10636883 | Semiconductor device including a gate trench and a source trench | — | 2020-04-28 |
| 10580888 | Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices | Thomas Feil, Maximilian Roesch, Martin Poelzl, Robert Haase, Sylvain Leomant +2 more | 2020-03-03 |
| 10510846 | Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region | Ralf Siemieniec, Franz Hirler, Michael Hutzler, David Laforet, Cedric Ouvrard +1 more | 2019-12-17 |
| 10453929 | Methods of manufacturing a power MOSFET | David Laforet, Michael Hutzler, Cedric Ouvrard, Ralf Siemieniec, Li Juin Yip | 2019-10-22 |
| 10453931 | Semiconductor device having termination trench | Franz Hirler, Ralf Siemieniec, Li Juin Yip | 2019-10-22 |
| 10388782 | Scalable current sense transistor | Giuseppe Bernacchia, Riccardo Pittassi | 2019-08-20 |
| 10374078 | Semiconductor devices and a method for forming a semiconductor device | Britta Wutte | 2019-08-06 |
| 10355126 | Semiconductor devices and method for manufacturing semiconductor devices | — | 2019-07-16 |
| 10347491 | Forming recombination centers in a semiconductor device | Wolfgang Jantscher, Alexander Binter, Petra Fischer, Ravi Keshav Joshi, Kurt Pekoll +5 more | 2019-07-09 |
| 10249721 | Semiconductor device including a gate trench and a source trench | — | 2019-04-02 |
| 10199456 | Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench | Minghao Jin, Li Juin Yip, Martin Vielemeyer, Franz Hirler | 2019-02-05 |
| 10177250 | Method of manufacturing a semiconductor device with a metal-filled groove in a polysilicon gate electrode | Ralf Siemieniec, Li Juin Yip | 2019-01-08 |
| 10164025 | Semiconductor device having termination trench | Franz Hirler, Ralf Siemieniec, Li Juin Yip | 2018-12-25 |
| 10121859 | Method of manufacturing semiconductor devices with transistor cells and semiconductor device | Ravi Keshav Joshi, Johannes Baumgartl, Oliver Hellmund, Martin Poelzl | 2018-11-06 |
| 10050113 | Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions | Ralf Siemieniec, David Laforet, Cedric Ouvrard, Li Juin Yip | 2018-08-14 |
| 9941365 | Method for forming a stress-reduced field-effect semiconductor device | Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder +2 more | 2018-04-10 |
| 9917160 | Semiconductor device having a polycrystalline silicon IGFET | Andrew Christopher Graeme Wood, Martin Poelzl, Martin Vielemeyer | 2018-03-13 |
| 9905685 | Semiconductor device and trench field plate field effect transistor with a field dielectric including thermally grown and deposited portions | Ralf Siemieniec, Mario Kleindienst, Stefan Kramp | 2018-02-27 |
| 9799738 | Semiconductor device with field electrode and contact structure | Ralf Siemieniec, Michael Hutzler, David Laforet, Cedric Ouvrard, Li Juin Yip | 2017-10-24 |
| 9799729 | Method of manufacturing a semiconductor device with field electrode structures, gate structures and auxiliary diode structures | Ralf Siemieniec, Franz Hirler, Martin Vielemeyer | 2017-10-24 |