Issued Patents All Time
Showing 51–75 of 89 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9768290 | Semiconductor device with metal-filled groove in polysilicon gate electrode | Ralf Siemieniec, Li Juin Yip | 2017-09-19 |
| 9728614 | Semiconductor device comprising a field electrode | David Laforet, Franz Hirler, Ralf Siemieniec | 2017-08-08 |
| 9722036 | Semiconductor device with field electrode structure | Franz Hirler, Ralf Siemieniec | 2017-08-01 |
| 9680004 | Power MOSFET with seperate gate and field plate trenches | David Laforet, Michael Hutzler, Cedric Ouvrard, Ralf Siemieniec, Li Juin Yip | 2017-06-13 |
| 9627520 | MOS transistor having a cell array edge zone arranged partially below and having an interface with a trench in an edge region of the cell array | Franz Hirler, Ralf Siemieniec, Christian Geissler, Maximilian Roesch | 2017-04-18 |
| 9620636 | Semiconductor device with field electrode structures in a cell area and termination structures in an edge area | Ralf Siemieniec, Franz Hirler, Michael Hutzler, Martin Poelzl | 2017-04-11 |
| 9543386 | Semiconductor device with field electrode structures, gate structures and auxiliary diode structures | Ralf Siemieniec, Franz Hirler, Martin Vielemeyer | 2017-01-10 |
| 9536960 | Semiconductor device comprising a field electrode | David Laforet, Franz Hirler, Ralf Siemieniec | 2017-01-03 |
| 9496339 | Semiconductor device comprising trench structures | Minghao Jin, Rudolf Rothmaler, Joerg Ortner | 2016-11-15 |
| 9478639 | Electrode-aligned selective epitaxy method for vertical power devices | Minghao Jin, Rudolf Rothmaler, Johannes Baumgartl | 2016-10-25 |
| 9450062 | Semiconductor device having polysilicon plugs with silicide crystallites | Michael Hutzler, Ralf Siemieniec | 2016-09-20 |
| 9443973 | Semiconductor device with charge compensation region underneath gate trench | Minghao Jin, Li Juin Yip, Martin Vielemeyer, Franz Hirler | 2016-09-13 |
| 9443972 | Semiconductor device with field electrode | — | 2016-09-13 |
| 9425788 | Current sensors and methods of improving accuracy thereof | Minghao Jin, Quaglino Roberto | 2016-08-23 |
| 9406763 | Stress-reduced field-effect semiconductor device and method for forming therefor | Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder +2 more | 2016-08-02 |
| 9356141 | Semiconductor device having peripheral trench structures | Andrew Christopher Graeme Wood, Martin Poelzl, Martin Vielemeyer | 2016-05-31 |
| 9324823 | Semiconductor device having a tapered gate structure and method | Rudolf Rothmaler, Christof Altstaetter, Minghao Jin | 2016-04-26 |
| 9324817 | Method for forming a transistor device having a field electrode | Ralf Siemieniec | 2016-04-26 |
| 9252251 | Semiconductor component with a space saving edge structure | Franz Hirler, Ralf Siemieniec, Christian Geissler, Maximilian Roesch | 2016-02-02 |
| 9190480 | Method and contact structure for coupling a doped body region to a trench electrode of a semiconductor device | Ralf Siemieniec, Li Juin Yip | 2015-11-17 |
| 9111766 | Transistor device with a field electrode | Ralf Siemieniec | 2015-08-18 |
| 9105713 | Semiconductor device with metal-filled groove in polysilicon gate electrode | Ralf Siemieniec, Li Juin Yip | 2015-08-11 |
| 9076765 | Semiconductor device comprising trench gate and buried source electrodes | Uli Hiller | 2015-07-07 |
| 8975662 | Method of manufacturing a semiconductor device using an impurity source containing a metallic recombination element and semiconductor device | Michael Hutzler, Ralf Siemieniec | 2015-03-10 |
| 8907408 | Stress-reduced field-effect semiconductor device and method for forming therefor | Stefan Sedlmaier, Markus Zundel, Franz Hirler, Johannes Baumgartl, Anton Mauder +2 more | 2014-12-09 |