Issued Patents All Time
Showing 51–75 of 380 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10439030 | Semiconductor device having a channel region patterned into a ridge by adjacent gate trenches | Andreas Meiser, Rolf Weis, Martin Vielemeyer, Markus Zundel, Peter Irsigler | 2019-10-08 |
| 10355087 | Semiconductor device including a transistor with a gate dielectric having a variable thickness | Martin Vielemeyer, Andreas Meiser, Till Schloesser, Martin Poelzl | 2019-07-16 |
| 10354992 | Semiconductor devices and methods for forming a semiconductor device | Joachim Weyers, Ahmed Mahmoud, Yann Ruet, Enrique Vecino Vazquez | 2019-07-16 |
| 10325996 | Method for producing a doped semiconductor layer | Hans-Joachim Schulze, Anton Mauder, Helmut Strack, Frank Kahlmann, Gerhard Miller | 2019-06-18 |
| 10319810 | Semiconductor device including super junction structure | Hans Weber | 2019-06-11 |
| 10283634 | Power MOSFET semiconductor | Oliver Haeberlen, Joachim Krumrey, Walter Rieger | 2019-05-07 |
| 10263086 | Semiconductor device with first and second field electrode structures | Martin Vielemeyer | 2019-04-16 |
| 10243071 | Transistor with field electrode | Markus Zundel | 2019-03-26 |
| 10211300 | Method of forming a semiconductor device | Gabor Mezoesi, Hans Weber | 2019-02-19 |
| 10211057 | Transistor component with reduced short-circuit current | Anton Mauder, Thomas Raker, Hans-Joachim Schulze, Wolfgang Werner | 2019-02-19 |
| 10204993 | Power semiconductor device having a field electrode | — | 2019-02-12 |
| 10199456 | Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench | Minghao Jin, Li Juin Yip, Oliver Blank, Martin Vielemeyer | 2019-02-05 |
| 10181511 | Semiconductor device and method of manufacturing a semiconductor device | Martin Poelzl, Georg Ehrentraut, Maximilian Roesch | 2019-01-15 |
| 10170497 | Method for manufacturing an electronic device and method for operating an electronic device | Thoralf Kautzsch, Alessia Scire, Steffen Bieselt, Anton Mauder, Wolfgang Scholz +2 more | 2019-01-01 |
| 10170615 | Semiconductor device including a lateral transistor | Anton Mauder, Andreas Meiser, Till Schloesser | 2019-01-01 |
| 10164025 | Semiconductor device having termination trench | Oliver Blank, Ralf Siemieniec, Li Juin Yip | 2018-12-25 |
| 10157982 | Charge compensation semiconductor devices | Daniel Tutuc, Christian Fachmann, Maximilian Treiber | 2018-12-18 |
| 10134845 | Method and power semiconductor device having an insulating region arranged in an edge termination region | Hans-Joachim Schulze, Anton Mauder | 2018-11-20 |
| 10109489 | Method for producing a superjunction device | Anton Mauder, Hans Weber, Johannes Georg Laven, Hans-Joachim Schulze, Werner Schustereder +3 more | 2018-10-23 |
| 10096704 | Semiconductor device having a non-depletable doping region | — | 2018-10-09 |
| 10084038 | Semiconductor device with drift zone and backside emitter and method of manufacturing thereof | Enrique Vecino Vazquez, Daniel Pobig, Manfred Pippan, Patrick Schindler | 2018-09-25 |
| 9972619 | Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices | Rolf Weis, Martin Feldtkeller, Gerald Deboy, Matthias Stecher, Armin Willmeroth | 2018-05-15 |
| 9960156 | Integrated semiconductor device having a level shifter | Andreas Meiser, Steffen Thiele | 2018-05-01 |
| 9954056 | Semiconductor device with superjunction structure and transistor cells in a transition region along a transistor cell region | Stefan Gamerith | 2018-04-24 |
| 9947741 | Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area | Hans-Joachim Schulze, Franz-Josef Niedernostheide, Anton Mauder, Joachim Weyers, Markus Schmitt +3 more | 2018-04-17 |