Issued Patents All Time
Showing 301–325 of 347 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7880241 | Low-temperature electrically activated gate electrode and method of fabricating same | John C. Arnold, Keith E. Fogel, Devendra K. Sadana | 2011-02-01 |
| 7833884 | Strained semiconductor-on-insulator by Si:C combined with porous process | Joel P. de Souza, Alexander Reznicek, Devendra K. Sadana | 2010-11-16 |
| 7816664 | Defect reduction by oxidation of silicon | Huajie Chen, Anthony G. Domenicucci, Keith E. Fogel, Devendra K. Sadana | 2010-10-19 |
| 7790495 | Optoelectronic device with germanium photodetector | Solomon Assefa, Yurii A. Vlasov, Fengnian Xia | 2010-09-07 |
| 7785982 | Structures containing electrodeposited germanium and methods for their fabrication | Hariklia Deligianni, Qiang Huang, Lubomyr T. Romankiw, Devendra K. Sadana, Katherine L. Saenger | 2010-08-31 |
| 7723791 | Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels | Huilong Zhu, Bruce B. Doris, Huajie Chen, Patricia M. Mooney | 2010-05-25 |
| 7705345 | High performance strained silicon FinFETs device and method for forming same | Kevin K. Chan, Dureseti Chidambarrao, Silke H. Christianson, Jack O. Chu, Anthony G. Domenicucci +4 more | 2010-04-27 |
| 7682917 | Disposable metallic or semiconductor gate spacer | Michael P. Chudzik, William K. Henson, Naim Moumen, Vijay Narayanan, Devendra K. Sadana +2 more | 2010-03-23 |
| 7679141 | High-quality SGOI by annealing near the alloy melting point | Huajie Chen, Anthony G. Domenicucci, Keith E. Fogel, Richard J. Murphy, Devendra K. Sadana | 2010-03-16 |
| 7592671 | Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer | Thomas N. Adam, Joel P. de Souza, Keith E. Fogel, Alexander Reznicek, Devendra K. Sadana +1 more | 2009-09-22 |
| 7550370 | Method of forming thin SGOI wafers with high relaxation and low stacking fault defect density | Huajie Chen, Devendra K. Sadana, Dan M. Mocuta | 2009-06-23 |
| 7511317 | Porous silicon for isolation region formation and related structure | Thomas N. Adam, Joel P. de Souza, Kathryn T. Schonenberg, Thomas A. Wallner | 2009-03-31 |
| 7507988 | Semiconductor heterostructure including a substantially relaxed, low defect density SiGe layer | Huajie Chen, Anthony G. Domenicucci, Keith E. Fogel, Devendra K. Sadana | 2009-03-24 |
| 7501318 | Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal | Keith E. Fogel, Devendra K. Sadana, Ghavam G. Shahidi | 2009-03-10 |
| 7494852 | Method for creating a Ge-rich semiconductor material for high-performance CMOS circuits | Bruce B. Doris, Devendra K. Sadana | 2009-02-24 |
| 7485539 | Strained semiconductor-on-insulator (sSOI) by a simox method | Thomas N. Adam, Joel P. de Souza, Keith E. Fogel, Alexander Reznicek, Devendra K. Sadana +1 more | 2009-02-03 |
| 7473587 | High-quality SGOI by oxidation near the alloy melting temperature | Anthony G. Domenicucci, Keith E. Fogel, Devendra K. Sadana | 2009-01-06 |
| 7442993 | Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer | Anthony G. Domenicucci, Keith E. Fogel, Effendi Leobandung, Devendra K. Sadana | 2008-10-28 |
| 7423303 | Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels | Huilong Zhu, Bruce B. Doris, Huajie Chen, Patricia M. Mooney | 2008-09-09 |
| 7358166 | Relaxed, low-defect SGOI for strained Si CMOS applications | Paul D. Agnello, Robert H. Dennard, Anthony G. Domenicucci, Keith E. Fogel, Devendra K. Sadana | 2008-04-15 |
| 7348253 | High-quality SGOI by annealing near the alloy melting point | Huajie Chen, Anthony G. Domenicucci, Keith E. Fogel, Richard J. Murphy, Devendra K. Sadana | 2008-03-25 |
| 7342293 | Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same | Thomas A. Wallner, Thomas N. Adam, Joel P. de Souza | 2008-03-11 |
| 7304328 | Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion | Keith E. Fogel, Devendra K. Sadana | 2007-12-04 |
| 7271043 | Method for manufacturing strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels | Huilong Zhu, Bruce B. Doris, Huajie Chen, Patricia M. Mooney | 2007-09-18 |
| 7247546 | Method of forming strained silicon materials with improved thermal conductivity | Huajie Chen, Keith E. Fogel, Ryan Mitchell, Devendra K. Sadana | 2007-07-24 |