Issued Patents All Time
Showing 326–347 of 347 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7172930 | Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer | Thomas N. Adam, Joel P. de Souza, Keith E. Fogel, Alexander Reznicek, Devendra K. Sadana +1 more | 2007-02-06 |
| 7169226 | Defect reduction by oxidation of silicon | Huajie Chen, Anthony G. Domenicucci, Keith E. Fogel, Devendra K. Sadana | 2007-01-30 |
| 7141115 | Method of producing silicon-germanium-on-insulator material using unstrained Ge-containing source layers | Keith E. Fogel, Devendra K. Sadana | 2006-11-28 |
| 7125458 | Formation of a silicon germanium-on-insulator structure by oxidation of a buried porous silicon layer | Kwang Su Choe, Keith E. Fogel, Devendra K. Sadana | 2006-10-24 |
| 7084050 | Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal | Joel P. de Souza, Keith E. Fogel, Devendra K. Sadana, Ghavam G. Shahidi | 2006-08-01 |
| 7074686 | Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications | Jack O. Chu, Keith E. Fogel, Steven J. Koester, Devendra K. Sadana | 2006-07-11 |
| 7067400 | Method for preventing sidewall consumption during oxidation of SGOI islands | Anda C. Mocuta | 2006-06-27 |
| 7049660 | High-quality SGOI by oxidation near the alloy melting temperature | Anthony G. Domenicucci, Keith E. Fogel, Devendra K. Sadana | 2006-05-23 |
| 7026249 | SiGe lattice engineering using a combination of oxidation, thinning and epitaxial regrowth | Huajie Chen, Keith E. Fogel, Devendra K. Sadana | 2006-04-11 |
| 6991998 | Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer | Anthony G. Domenicucci, Keith E. Fogel, Effendi Leobandung, Devendra K. Sadana | 2006-01-31 |
| 6989058 | Use of thin SOI to inhibit relaxation of SiGe layers | Huajie Chen, Keith E. Fogel, Devendra K. Sadana | 2006-01-24 |
| 6972247 | Method of fabricating strained Si SOI wafers | Guy M. Cohen, Huajie Chen | 2005-12-06 |
| 6946373 | Relaxed, low-defect SGOI for strained Si CMOS applications | Paul D. Agnello, Robert H. Dennard, Anthony G. Domenicucci, Keith E. Fogel, Devendra K. Sadana | 2005-09-20 |
| 6893936 | Method of Forming strained SI/SIGE on insulator with silicon germanium buffer | Huajie Chen | 2005-05-17 |
| 6878611 | Patterned strained silicon for high performance circuits | Devendra K. Sadana, Tze-Chiang Chen, Kwang Su Choe, Keith E. Fogel | 2005-04-12 |
| 6875982 | Electron microscope magnification standard providing precise calibration in the magnification range 5000X-2000,000X | John Bruley, Anthony G. Domenicucci, Devendra K. Sadana | 2005-04-05 |
| 6861158 | Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal | Joel P. de Souza, Keith E. Fogel, Devendra K. Sadana, Ghavam G. Shahidi | 2005-03-01 |
| 6855436 | Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal | Keith E. Fogel, Devendra K. Sadana, Ghavam G. Shahidi | 2005-02-15 |
| 6841457 | Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion | Keith E. Fogel, Devendra K. Sadana | 2005-01-11 |
| 6825102 | Method of improving the quality of defective semiconductor material | Keith E. Fogel, Shreesh Narasimha, Devendra K. Sadana | 2004-11-30 |
| 6805962 | Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications | Jack O. Chu, Keith E. Fogel, Steven J. Koester, Devendra K. Sadana, John A. Ott | 2004-10-19 |
| 6803240 | Method of measuring crystal defects in thin Si/SiGe bilayers | Keith E. Fogel, Devendra K. Sadana | 2004-10-12 |