SN

Satyanarayana V. Nitta

IBM: 83 patents #793 of 70,183Top 2%
Globalfoundries: 4 patents #817 of 4,424Top 20%
MM Merlyn Mind: 2 patents #9 of 25Top 40%
FS Freeescale Semiconductor: 1 patents #2,021 of 3,767Top 55%
📍 Poughquag, NY: #2 of 99 inventorsTop 3%
🗺 New York: #709 of 115,490 inventorsTop 1%
Overall (All Time): #18,360 of 4,157,543Top 1%
89
Patents All Time

Issued Patents All Time

Showing 76–89 of 89 patents

Patent #TitleCo-InventorsDate
6831366 Interconnects containing first and second porous low-k dielectrics separated by a porous buried etch stop layer Stephen M. Gates, Jeffrey Hedrick, Sampath Purushothaman, Cristy Sensenich Tyberg 2004-12-14
6780499 Ordered two-phase dielectric film, and semiconductor device containing the same Stephen M. Gates, Christopher B. Murray, Sampath Purushothaman 2004-08-24
6737725 Multilevel interconnect structure containing air gaps and method for making Alfred Grill, Jeffrey Hedrick, Christopher V. Jahnes, Kevin S. Petrarca, Sampath Purushothaman +2 more 2004-05-18
6734096 Fine-pitch device lithography using a sacrificial hardmask Timothy J. Dalton, Minakshisundaran Balasubramanian Anand, Michael D. Armacost, Shyng-Tsong Chen, Stephen M. Gates +2 more 2004-05-11
6724069 Spin-on cap layer, and semiconductor device containing same Timothy J. Dalton, Stephen M. Gates, Jeffrey Hedrick, Sampath Purushothaman, Christy S. Tyberg 2004-04-20
6716742 Low-k interconnect structure comprised of a multilayer of spin-on porous dielectrics Stephen M. Gates, Jeffrey Hedrick, Sampath Purushothaman, Cristy Sensenich Tyberg 2004-04-06
6710450 Interconnect structure with precise conductor resistance and method to form same Stephen M. Gates, Jeffrey Hedrick, Sampath Purushothaman, Cristy Sensenich Tyberg 2004-03-23
6677680 Hybrid low-k interconnect structure comprised of 2 spin-on dielectric materials Stephen M. Gates, Jeffrey Hedrick, Sampath Purushothaman, Cristy Sensenich Tyberg 2004-01-13
6641899 Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same Matthew E. Colburn, Stephen M. Gates, Jeffrey Hedrick, Elbert E. Huang, Sampath Purushothaman +1 more 2003-11-04
6603204 Low-k interconnect structure comprised of a multilayer of spin-on porous dielectrics Stephen M. Gates, Jeffrey Hedrick, Sampath Purushothaman, Cristy Sensenich Tyberg 2003-08-05
6537908 Method for dual-damascence patterning of low-k interconnects using spin-on distributed hardmask Ann R. Fornof, Stephen M. Gates, Jeffrey Hedrick, Sampath Purushothaman, Christy S. Tyberg 2003-03-25
6451712 Method for forming a porous dielectric material layer in a semiconductor device and device formed Timothy J. Dalton, Stephen E. Greco, Jeffrey Hedrick, Sampath Purushothaman, Kenneth P. Rodbell +1 more 2002-09-17
6413852 Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material Alfred Grill, Jeffrey Hedrick, Christopher V. Jahnes, Kevin S. Petrarca, Sampath Purushothaman +2 more 2002-07-02
6346484 Method for selective extraction of sacrificial place-holding material used in fabrication of air gap-containing interconnect structures John M. Cotte, Christopher V. Jahnes, Kenneth McCullough, Wayne M. Moreau, Katherine L. Saenger +1 more 2002-02-12