Issued Patents All Time
Showing 976–1,000 of 1,139 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9536836 | MIS (Metal-Insulator-Semiconductor) contact structures for semiconductor devices | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2017-01-03 |
| 9536877 | Methods of forming different spacer structures on integrated circuit products having differing gate pitch dimensions and the resulting products | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2017-01-03 |
| 9530775 | Methods of forming different FinFET devices having different fin heights and an integrated circuit product containing such devices | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2016-12-27 |
| 9520392 | Semiconductor device including finFET and fin varactor | Kangguo Cheng, Junli Wang, Tenko Yamashita | 2016-12-13 |
| 9515163 | Methods of forming FinFET semiconductor devices with self-aligned contact elements using a replacement gate process and the resulting devices | Shom Ponoth, Balasubramanian Pranatharthiharan | 2016-12-06 |
| 9515180 | Vertical slit transistor with optimized AC performance | Qing Liu, Xiuyu Cai, Chun-Chen Yeh | 2016-12-06 |
| 9508604 | Methods of forming punch through stop regions on FinFET devices on CMOS-based IC products using doped spacers | Min Gyu Sung, Chanro Park, Hoon Kim | 2016-11-29 |
| 9502518 | Multi-channel gate-all-around FET | Qing Liu, Chun-Chen Yeh, Xiuyu Cai | 2016-11-22 |
| 9502308 | Methods for forming transistor devices with different source/drain contact liners and the resulting devices | Chanro Park, Hoon Kim, Min Gyu Sung | 2016-11-22 |
| 9502286 | Methods of forming self-aligned contact structures on semiconductor devices and the resulting devices | Chanro Park, Min Gyu Sung, Hoon Kim, Andre P. Labonte | 2016-11-22 |
| 9502302 | Process for integrated circuit fabrication including a uniform depth tungsten recess technique | Qing Liu, Chun-Chen Yeh | 2016-11-22 |
| 9496354 | Semiconductor devices with dummy gate structures partially on isolation regions | Xiuyu Cai, Ajey Poovannummoottil Jacob, Andreas Knorr, Christopher M. Prindle | 2016-11-15 |
| 9496185 | Dual channel finFET with relaxed pFET region | Xiuyu Cai, Qing Liu, Chun-Chen Yeh | 2016-11-15 |
| 9484306 | MOSFET with asymmetric self-aligned contact | Kangguo Cheng, Xin Miao, Tenko Yamashita | 2016-11-01 |
| 9478661 | Semiconductor device structures with self-aligned fin structure(s) and fabrication methods thereof | Chanro Park, Hoon Kim, Min Gyu Sung | 2016-10-25 |
| 9478634 | Methods of forming replacement gate structures on finFET devices and the resulting devices | Xiuyu Cai | 2016-10-25 |
| 9478538 | Methods for forming transistor devices with different threshold voltages and the resulting devices | Hoon Kim, Min Gyu Sung, Chanro Park | 2016-10-25 |
| 9478662 | Gate and source/drain contact structures for a semiconductor device | Andre P. Labonte | 2016-10-25 |
| 9472670 | Field effect transistor device spacers | Rama Kambhampati, Junli Wang, Tenko Yamashita | 2016-10-18 |
| 9472446 | Methods of forming a FinFET semiconductor device with a unique gate configuration, and the resulting FinFET device | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2016-10-18 |
| 9466491 | Methods of forming a semiconductor device with a spacer etch block cap and the resulting device | Daniel T. Pham, Hyun-Jin Cho | 2016-10-11 |
| 9466722 | Large area contacts for small transistors | Qing Liu, Xiuyu Cai, Chun-Chen Yeh | 2016-10-11 |
| 9466676 | Method for forming a semiconductor device having a metal gate recess | Vimal Kamineni | 2016-10-11 |
| 9466570 | MOSFET with asymmetric self-aligned contact | Kangguo Cheng, Xin Miao, Tenko Yamashita | 2016-10-11 |
| 9461171 | Methods of increasing silicide to epi contact areas and the resulting devices | Hoon Kim, Naim Moumen, Chanro Park, William J. Taylor, Jr. | 2016-10-04 |