Issued Patents All Time
Showing 151–175 of 197 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8624318 | Semiconductor switching circuit employing quantum dot structures | Zhong-Xiang He | 2014-01-07 |
| 8610174 | Bipolar transistor with a raised collector pedestal for reduced capacitance | James W. Adkisson, John J. Ellis-Monaghan, David L. Harame, John J. Pekarik | 2013-12-17 |
| 8603883 | Interface control in a bipolar junction transistor | Kevin K. Chan, Peng Cheng, Ljubo Radic | 2013-12-10 |
| 8592876 | Micro-electro-mechanical system (MEMS) capacitive OHMIC switch and design structures | Hanyi Ding, Anthony K. Stamper | 2013-11-26 |
| 8546230 | Bipolar transistor with a collector having a protected outer edge portion for reduced based-collector junction capacitance and a method of forming the transistor | James W. Adkisson, David L. Harame, Robert K. Leidy | 2013-10-01 |
| 8536012 | Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases | Renata Camillo-Castillo, Peter B. Gray, David L. Harame, Alvin J. Joseph, Marwan H. Khater | 2013-09-17 |
| 8513706 | Heterojunction bipolar transistors with reduced base resistance | Erik M. Dahlstrom, Peter B. Gray | 2013-08-20 |
| 8513084 | Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the transistor | David L. Harame, Russell T. Herrin | 2013-08-20 |
| 8492237 | Methods of fabricating a bipolar junction transistor with a self-aligned emitter and base | Kevin K. Chan, Erik M. Dahlstrom, Peter B. Gray, David L. Harame | 2013-07-23 |
| 8445967 | Semiconductor switching device employing a quantum dot structure | Zhong-Xiang He | 2013-05-21 |
| 8415763 | Tunable semiconductor device | David L. Harame, Alvin J. Joseph, Ramana Malladi | 2013-04-09 |
| 8389372 | Heterojunction bipolar transistors with reduced base resistance | Erik M. Dahlstrom, Peter B. Gray | 2013-03-05 |
| 8338863 | Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance | Renata Camillo-Castillo, Erik M. Dahlstrom | 2012-12-25 |
| 8299500 | Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base region | Wade J. Hodge, Alvin J. Joseph, Rajendran Krishnasamy, Bradley A. Orner | 2012-10-30 |
| 8242542 | Semiconductor switching device employing a quantum dot structure | Zhong-Xiang He | 2012-08-14 |
| 8232156 | Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance | Renata Camillo-Castillo, Erik M. Dahlstrom | 2012-07-31 |
| 8227300 | Semiconductor switching circuit employing quantum dot structures | Zhong-Xiang He | 2012-07-24 |
| 7904273 | In-line depth measurement for thru silicon via | Ping-Chuan Wang, Kimball M. Watson, Zhijian Yang | 2011-03-08 |
| 7904868 | Structures including means for lateral current carrying capability improvement in semiconductor devices | Natalie B. Feilchenfeld, Zhong-Xiang He, BethAnn Rainey, Ping-Chuan Wang, Kimball M. Watson | 2011-03-08 |
| 7851923 | Low resistance and inductance backside through vias and methods of fabricating same | Mete Erturk, Robert A. Groves, Jeffrey B. Johnson, Alvin J. Joseph, Edmund J. Sprogis +1 more | 2010-12-14 |
| 7776704 | Method to build self-aligned NPN in advanced BiCMOS technology | James S. Dunn, Alvin J. Joseph | 2010-08-17 |
| 7709338 | BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices | Peter B. Gray, Alvin J. Joseph | 2010-05-04 |
| 7696034 | Methods of base formation in a BiCOMS process | Peter J. Geiss, Marwan H. Khater, Randy W. Mann, Robert J. Purtell, Beth Ann Rainey +2 more | 2010-04-13 |
| 7625792 | Method of base formation in a BiCMOS process | Peter J. Geiss, Alvin J. Joseph, Bradley A. Orner | 2009-12-01 |
| 7563714 | Low resistance and inductance backside through vias and methods of fabricating same | Mete Erturk, Robert A. Groves, Jeffrey B. Johnson, Alvin J. Joseph, Edmund J. Sprogis +1 more | 2009-07-21 |