Issued Patents All Time
Showing 126–150 of 197 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9006797 | Micro-electro-mechanical system (MEMS) capacitive ohmic switch and design structures | Hanyi Ding, Anthony K. Stamper | 2015-04-14 |
| 8999804 | Methods for fabricating a bipolar junction transistor with self-aligned terminals | — | 2015-04-07 |
| 8956945 | Trench isolation for bipolar junction transistors in BiCMOS technology | James S. Dunn | 2015-02-17 |
| 8932931 | Self-aligned emitter-base region | Margaret A. Faucher, Paula M. Fisher, Thomas H. Gabert, Joseph P. Hasselbach, Glenn C. MacDougall | 2015-01-13 |
| 8927381 | Self-aligned bipolar junction transistors | David L. Harame | 2015-01-06 |
| 8927379 | Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology | James W. Adkisson, Kevin K. Chan, David L. Harame, John J. Pekarik | 2015-01-06 |
| 8927357 | Junction field-effect transistor with raised source and drain regions formed by selective epitaxy | Kevin K. Chan, John J. Ellis-Monaghan, David L. Harame, John J. Pekarik | 2015-01-06 |
| 8921195 | Isolation scheme for bipolar transistors in BiCMOS technology | Peng Cheng, Peter B. Gray, Vibhor Jain, Robert K. Leidy | 2014-12-30 |
| 8921194 | PNP bipolar junction transistor fabrication using selective epitaxy | David L. Harame | 2014-12-30 |
| 8916952 | Self-aligned emitter-base in advanced BiCMOS technology | Kevin K. Chan, David L. Harame, Russell T. Herrin | 2014-12-23 |
| 8916440 | Semiconductor structures and methods of manufacture | William F. Clark, Jr., John J. Pekarik, Yun Shi, Yanli Zhang | 2014-12-23 |
| 8916446 | Bipolar junction transistor with multiple emitter fingers | Renata Camillo-Castillo, David L. Harame, Ramana Malladi, John J. Pekarik | 2014-12-23 |
| 8912574 | Device isolation with improved thermal conductivity | Mattias E. Dahlstrom, Dinh Dang, Ramana Malladi | 2014-12-16 |
| 8871600 | Schottky barrier diodes with a guard ring formed by selective epitaxy | David L. Harame, Robert M. Rassel | 2014-10-28 |
| 8853043 | Silicon germanium (SiGe) heterojunction bipolar transistor (HBT) | Wade J. Hodge, Alvin J. Joseph, Rajendran Krishnasamy, Bradley A. Orner | 2014-10-07 |
| 8846481 | Transistor and method of forming the transistor so as to have reduced base resistance | Marc W. Cantell, Thai Doan, Jessica A. Levy, William J. Murphy, Christa R. Willets | 2014-09-30 |
| 8841750 | Local wiring for a bipolar junction transistor including a self-aligned emitter region | David L. Harame, Zhong-Xiang He | 2014-09-23 |
| 8796149 | Collector-up bipolar junction transistors in BiCMOS technology | James W. Adkisson, David L. Harame | 2014-08-05 |
| 8786051 | Transistor having a monocrystalline center section and a polycrystalline outer section, and narrow in-substrate collector region for reduced base-collector junction capacitance | James W. Adkisson, David L. Harame | 2014-07-22 |
| 8728897 | Power sige heterojunction bipolar transistor (HBT) with improved drive current by strain compensation | Thomas N. Adam, David L. Harame, Alexander Reznicek | 2014-05-20 |
| 8716837 | Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases | Renata Camillo-Castillo, Peter B. Gray, David L. Harame, Alvin J. Joseph, Marwan H. Khater | 2014-05-06 |
| 8716096 | Self-aligned emitter-base in advanced BiCMOS technology | Kevin K. Chan, David L. Harame, Russell T. Herrin | 2014-05-06 |
| 8710500 | Bipolar junction transistor with a self-aligned emitter and base | Kevin K. Chan, Erik M. Dahlstrom, Peter B. Gray, David L. Harame | 2014-04-29 |
| 8673726 | Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the transistor | David L. Harame, Russell T. Herrin | 2014-03-18 |
| 8652919 | Tunable semiconductor device | David L. Harame, Alvin J. Joseph, Ramana Malladi | 2014-02-18 |