QL

Qizhi Liu

IBM: 113 patents #463 of 70,183Top 1%
Globalfoundries: 57 patents #34 of 4,424Top 1%
GU Globalfoundries U.S.: 19 patents #29 of 665Top 5%
GP Globalfoundries Singapore Pte.: 5 patents #141 of 828Top 20%
CS Conexant Systems: 2 patents #186 of 657Top 30%
NF Newport Fab: 1 patents #56 of 98Top 60%
📍 Lexington, MA: #3 of 2,299 inventorsTop 1%
🗺 Massachusetts: #42 of 88,656 inventorsTop 1%
Overall (All Time): #3,484 of 4,157,543Top 1%
197
Patents All Time

Issued Patents All Time

Showing 101–125 of 197 patents

Patent #TitleCo-InventorsDate
9240448 Bipolar junction transistors with reduced base-collector junction capacitance James W. Adkisson, James R. Elliott, David L. Harame, Marwan H. Khater, Robert K. Leidy +1 more 2016-01-19
9236499 Junction field-effect transistor with raised source and drain regions formed by selective epitaxy Kevin K. Chan, John J. Ellis-Monaghan, David L. Harame, John J. Pekarik 2016-01-12
9231087 Bipolar junction transistors with self-aligned terminals John Benoit, James R. Elliott, Peter B. Gray, Alvin J. Joseph, Christa R. Willets 2016-01-05
9231089 Formation of an asymmetric trench in a semiconductor substrate and a bipolar semiconductor device having an asymmetric trench isolation region Robert K. Leidy, Mark D. Levy, Gary L. Milo 2016-01-05
9224843 Formation of a high aspect ratio trench in a semiconductor substrate and a bipolar semiconductor device having a high aspect ratio trench isolation region John Benoit, James R. Elliott 2015-12-29
9224841 Semiconductor fins on a trench isolation region in a bulk semiconductor substrate and a method of forming the semiconductor fins David L. Harame, Edward J. Nowak 2015-12-29
9202900 Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology James W. Adkisson, Kevin K. Chan, David L. Harame, John J. Pekarik 2015-12-01
9202869 Self-aligned bipolar junction transistor having self-planarizing isolation raised base structures Natalie B. Feilchenfeld 2015-12-01
9159816 PNP bipolar junction transistor fabrication using selective epitaxy David L. Harame 2015-10-13
9159801 Bipolar junction transistor with multiple emitter fingers Renata Camillo-Castillo, David L. Harame, Ramana Malladi, John J. Pekarik 2015-10-13
9111986 Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base Renata Camillo-Castillo, Peng Cheng, Vibhor Jain, John J. Pekarik 2015-08-18
9105677 Base profile of self-aligned bipolar transistors for power amplifier applications James S. Dunn, James S. Nakos 2015-08-11
9093478 Integrated circuit structure with bulk silicon FinFET and methods of forming Kangguo Cheng, Ali Khakifirooz, Edward J. Nowak, Jed H. Rankin 2015-07-28
9093491 Bipolar junction transistors with reduced base-collector junction capacitance James W. Adkisson, James R. Elliott, David L. Harame, Marwan H. Khater, Robert K. Leidy +1 more 2015-07-28
9087868 Bipolar junction transistors with self-aligned terminals 2015-07-21
9059252 Silicon waveguide on bulk silicon substrate and methods of forming Steven M. Shank 2015-06-16
9059196 Bipolar junction transistors with self-aligned terminals John Benoit, James R. Elliot, Peter B. Gray, Alvin J. Joseph, Christa R. Willets 2015-06-16
9059138 Heterojunction bipolar transistor with reduced sub-collector length, method of manufacture and design structure Renata Camillo-Castillo, Zhong-Xiang He, Jeffrey B. Johnson, Xuefeng Liu 2015-06-16
9059233 Formation of an asymmetric trench in a semiconductor substrate and a bipolar semiconductor device having an asymmetric trench isolation region Robert K. Leidy, Mark D. Levy, Gary L. Milo 2015-06-16
9059234 Formation of a high aspect ratio trench in a semiconductor substrate and a bipolar semiconductor device having a high aspect ratio trench isolation region John Benoit, James R. Elliott 2015-06-16
9053939 Heterojunction bipolar transistor with epitaxial emitter stack to improve vertical scaling Thomas N. Adam, David L. Harame, Alexander Reznicek 2015-06-09
9041105 Integrated circuit including transistor structure on depleted silicon-on-insulator, related method and design structure William F. Clark, Jr., Robert M. Rassel, Yun Shi 2015-05-26
9029229 Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regions James W. Adkisson, Peng Cheng, Vibhor Jain, Vikas K. Kaushal, John J. Pekarik 2015-05-12
9029949 Semiconductor-on-insulator (SOI) structures with local heat dissipater(s) and methods Jeffrey P. Gambino, Zhenzhen Ye, Yan Zhang 2015-05-12
9018754 Heat dissipative electrical isolation/insulation structure for semiconductor devices and method of making Jeffrey P. Gambino, Zhenzhen Ye, Yan Zhang 2015-04-28