Issued Patents All Time
Showing 76–100 of 110 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7696034 | Methods of base formation in a BiCOMS process | Peter J. Geiss, Qizhi Liu, Randy W. Mann, Robert J. Purtell, Beth Ann Rainey +2 more | 2010-04-13 |
| 7615457 | Method of fabricating self-aligned bipolar transistor having tapered collector | Hiroyuki Akatsu, Rama Divakaruni, Gregory G. Freeman, David R. Greenberg, William R. Tonti | 2009-11-10 |
| 7611954 | Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same | Gregory G. Freeman, Francois Pagette | 2009-11-03 |
| 7482673 | Structure and method for bipolar transistor having non-uniform collector-base junction | — | 2009-01-27 |
| 7476914 | Methods to improve the SiGe heterojunction bipolar device performance | Omer H. Dokumaci, Gregory G. Freeman, Rajendran Krishnasamy, Kathryn T. Schonenberg | 2009-01-13 |
| 7466010 | Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border | David C. Ahlgren, Gregory G. Freeman, Richard P. Volant | 2008-12-16 |
| 7462547 | Method of fabricating a bipolar transistor having reduced collector-base capacitance | Hiroyuki Akatsu, Rama Divakaruni, Christopher M. Schnabel, William R. Tonti | 2008-12-09 |
| 7442595 | Bipolar transistor with collector having an epitaxial Si:C region | Gregory G. Freeman, Rajendran Krishnasamy, Kathryn T. Schonenberg, Andreas D. Stricker | 2008-10-28 |
| 7425754 | Structure and method of self-aligned bipolar transistor having tapered collector | Hiroyuki Akatsu, Rama Divakaruni, Gregory G. Freeman, David R. Greenberg, William R. Tonti | 2008-09-16 |
| 7390721 | Methods of base formation in a BiCMOS process | Peter J. Geiss, Qizhi Liu, Randy W. Mann, Robert J. Purtell, BethAnn Rainey +2 more | 2008-06-24 |
| 7355221 | Field effect transistor having an asymmetrically stressed channel region | Gregory G. Freeman, Anil K. Chinthakindi, David R. Greenberg, Basanth Jagannathan, John J. Pekarik +1 more | 2008-04-08 |
| 7341920 | Method for forming a bipolar transistor device with self-aligned raised extrinsic base | — | 2008-03-11 |
| 7329941 | Creating increased mobility in a bipolar device | Dureseti Chidambarrao, Gregory G. Freeman | 2008-02-12 |
| 7288829 | Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicide | Francois Pagette | 2007-10-30 |
| 7253096 | Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same | James S. Dunn, David L. Harame, Alvin J. Joseph, Qizhi Liu, Francois Pagette +2 more | 2007-08-07 |
| 7190046 | Bipolar transistor having reduced collector-base capacitance | Hiroyuki Akatsu, Rama Divakaruni, Christopher M. Schnabel, William R. Tonti | 2007-03-13 |
| 7180157 | Bipolar transistor with a very narrow emitter feature | Gregory G. Freeman, Francois Pagette, Andreas D. Stricker | 2007-02-20 |
| 7170083 | Bipolar transistor with collector having an epitaxial Si:C region | Gregory G. Freeman, Rajendran Krishnasamy, Kathryn T. Schonenberg, Andreas D. Stricker | 2007-01-30 |
| 7144787 | Methods to improve the SiGe heterojunction bipolar device performance | Omer H. Dokumaci, Gregory G. Freeman, Rajendran Krishnasamy, Kathryn T. Schonenberg | 2006-12-05 |
| 7119416 | Bipolar transistor structure with self-aligned raised extrinsic base and methods | Thomas N. Adam, Kevin K. Chan, Alvin J. Joseph, Qizhi Liu, Beth Ann Rainey +1 more | 2006-10-10 |
| 7102205 | Bipolar transistor with extrinsic stress layer | Dureseti Chidambarrao, Gregory G. Freeman | 2006-09-05 |
| 7087940 | Structure and method of forming bipolar transistor having a self-aligned raised extrinsic base using self-aligned etch stop layer | Francois Pagette | 2006-08-08 |
| 7037798 | Bipolar transistor structure with self-aligned raised extrinsic base and methods | Thomas N. Adam, Kevin K. Chan, Alvin J. Joseph, Qizhi Liu, Beth Ann Rainey +1 more | 2006-05-02 |
| 7002221 | Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same | James S. Dunn, David L. Harame, Alvin J. Joseph, Qizhi Liu, Francois Pagette +2 more | 2006-02-21 |
| 6982442 | Structure and method for making heterojunction bipolar transistor having self-aligned silicon-germanium raised extrinsic base | Kevin K. Chan, Kathryn T. Schonenberg, Panda Siddhartha | 2006-01-03 |