Issued Patents All Time
Showing 51–75 of 110 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8810005 | Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up region | Renata Camillo-Castillo, Peng Cheng, Peter B. Gray, Vibhor Jain, Vikas K. Kaushal | 2014-08-19 |
| 8772902 | Fabrication of a localized thick box with planar oxide/SOI interface on bulk silicon substrate for silicon photonics integration | Solomon Assefa, William M. Green, Yurii A. Vlasov | 2014-07-08 |
| 8765536 | Stress engineered multi-layers for integration of CMOS and Si nanophotonics | Solomon Assefa, Tymon Barwicz, Swetha Kamlapurkar, Steven M. Shank, Yurii A. Vlasov | 2014-07-01 |
| 8716807 | Fabrication of devices having different interfacial oxide thickness via lateral oxidation | Jin Cai, Eduard A. Cartier, Martin M. Frank | 2014-05-06 |
| 8716837 | Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases | Renata Camillo-Castillo, Peter B. Gray, David L. Harame, Alvin J. Joseph, Qizhi Liu | 2014-05-06 |
| 8658530 | Method of fabricating an epitaxial Ni silicide film | Christian Lavoie, Bin Yang, Zhen Zhang | 2014-02-25 |
| 8637335 | Photonic modulator with a semiconductor contact | Solomon Assefa, William M. Green, Yurii A. Vlasov | 2014-01-28 |
| 8586426 | Method of forming isolation structures for SOI devices with ultrathin SOI and ultrathin box | Robert H. Dennard, Leathen Shi, Jeng-Bang Yau | 2013-11-19 |
| 8541835 | Schottky FET fabricated with gate last process | Jin Cai, Dechao Guo, Christian Lavoie, Zhen Zhang | 2013-09-24 |
| 8536012 | Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases | Renata Camillo-Castillo, Peter B. Gray, David L. Harame, Alvin J. Joseph, Qizhi Liu | 2013-09-17 |
| 8525264 | Photonic modulator with a semiconductor contact | Solomon Assefa, William M. Green, Yurii A. Vlasov | 2013-09-03 |
| 8492838 | Isolation structures for SOI devices with ultrathin SOI and ultrathin box | Robert H. Dennard, Leathen Shi, Jeng-Bang Yau | 2013-07-23 |
| 8482084 | SOI schottky source/drain device structure to control encroachment and delamination of silicide | Christian Lavoie, Bin Yang, Zhen Zhang | 2013-07-09 |
| 8420469 | Schottky FET fabricated with gate last process | Jin Cai, Dechao Guo, Christian Lavoie, Zhen Zhang | 2013-04-16 |
| 8420493 | SOI SiGe-base lateral bipolar junction transistor | Tak H. Ning, Kevin K. Chan | 2013-04-16 |
| 8415748 | Use of epitaxial Ni silicide | Christian Lavoie, Bin Yang, Zhen Zhang | 2013-04-09 |
| 8304306 | Fabrication of devices having different interfacial oxide thickness via lateral oxidation | Jin Cai, Eduard A. Cartier, Martin M. Frank | 2012-11-06 |
| 8288758 | SOI SiGe-base lateral bipolar junction transistor | Tak H. Ning, Kevin K. Chan | 2012-10-16 |
| 8168503 | Method for forming an SOI schottky source/drain device to control encroachment and delamination of silicide | Christian Lavoie, Bin Yang, Zhen Zhang | 2012-05-01 |
| 8106456 | SOI transistors having an embedded extension region to improve extension resistance and channel strain characteristics | — | 2012-01-31 |
| 7947589 | FinFET formation with a thermal oxide spacer hard mask formed from crystalline silicon layer | Ramachandran Muralidhar | 2011-05-24 |
| 7935986 | Method for forming a bipolar transistor device with self-aligned raised extrinsic base | — | 2011-05-03 |
| 7888745 | Bipolar transistor with dual shallow trench isolation and low base resistance | Andreas D. Stricker, Bradley A. Orner, Mattias E. Dahlstrom | 2011-02-15 |
| 7741186 | Creating increased mobility in a bipolar device | Dureseti Chidambarrao, Gregory G. Freeman | 2010-06-22 |
| 7732292 | Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicide | Francois Pagette | 2010-06-08 |