MK

Marwan H. Khater

IBM: 86 patents #750 of 70,183Top 2%
Globalfoundries: 22 patents #130 of 4,424Top 3%
University Of Texas System: 2 patents #1,567 of 6,559Top 25%
Applied Materials: 1 patents #4,780 of 7,310Top 70%
FS Freeescale Semiconductor: 1 patents #2,021 of 3,767Top 55%
📍 New York, NY: #45 of 20,192 inventorsTop 1%
🗺 New York: #450 of 115,490 inventorsTop 1%
Overall (All Time): #12,005 of 4,157,543Top 1%
110
Patents All Time

Issued Patents All Time

Showing 101–110 of 110 patents

Patent #TitleCo-InventorsDate
6979884 Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border David C. Ahlgren, Gregory G. Freeman, Richard P. Volant 2005-12-27
6972443 Structure and method of forming a bipolar transistor having a self-aligned raised extrinsic base using link-up region formed from an opening therein 2005-12-06
6965133 Method of base formation in a BiCMOS process Peter J. Geiss, Qizhi Liu, Randy W. Mann, Robert J. Purtell, BethAnn Rainey +2 more 2005-11-15
6960820 Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same Gregory G. Freeman, Francois Pagette 2005-11-01
6940149 Structure and method of forming a bipolar transistor having a void between emitter and extrinsic base Rama Divakaruni, Gregory G. Freeman, William R. Tonti 2005-09-06
6864560 Bipolar transistor structure with a shallow isolation extension region providing reduced parasitic capacitance Jae-Sung Rieh, Andreas D. Stricker, Gregory G. Freeman, Kathryn T. Schonenberg 2005-03-08
6858485 Method for creation of a very narrow emitter feature Gregory G. Freeman, Francois Pagette, Andreas D. Stricker 2005-02-22
6676800 Particle contamination cleaning from substrates using plasmas, reactive gases, and mechanical agitation John J. Festa, Darryl A. Bennett, Joel Brad Bailey, Lawrence J. Overzet, Siva Kanakasabapathy 2004-01-13
6459066 Transmission line based inductively coupled plasma source with stable impedance Lawrence J. Overzet 2002-10-01
6028285 High density plasma source for semiconductor processing Lawrence J. Overzet, Blake E. Cherrington 2000-02-22