Issued Patents All Time
Showing 76–100 of 272 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9713250 | Patterned metallization handle layer for controlled spalling | Turki bin Saud bin Mohammed Al-Saud, Stephen W. Bedell, Paul A. Lauro, Devendra K. Sadana | 2017-07-18 |
| 9704860 | Epitaxial oxide fin segments to prevent strained semiconductor fin end relaxation | Karthik Balakrishnan, Sivananda K. Kanakasabapathy, Alexander Reznicek | 2017-07-11 |
| 9666674 | Formation of large scale single crystalline graphene | Christos D. Dimitrakopoulos, Jeehwan Kim, Hongsik Park | 2017-05-30 |
| 9660116 | Nanowires formed by employing solder nanodots | Jeehwan Kim, Jae-Woong Nah, Devendra K. Sadana, Kuen-Ting Shiu | 2017-05-23 |
| 9653570 | Junction interlayer dielectric for reducing leakage current in semiconductor devices | Joel P. de Souza, Jeehwan Kim, Devendra K. Sadana, Brent A. Wacaser | 2017-05-16 |
| 9646832 | Porous fin as compliant medium to form dislocation-free heteroepitaxial films | Kangguo Cheng, Jeehwan Kim, Devendra K. Sadana | 2017-05-09 |
| 9634164 | Reduced light degradation due to low power deposition of buffer layer | Augustin J. Hong, Jeehwan Kim, Devendra K. Sadana | 2017-04-25 |
| 9620592 | Doped zinc oxide and n-doping to reduce junction leakage | Joel P. de Souza, Jeehwan Kim, Siegfried Maurer, Devendra K. Sadana | 2017-04-11 |
| 9601624 | SOI based FINFET with strained source-drain regions | Stephen W. Bedell, Joel P. de Souza, Alexander Reznicek, Devendra K. Sadana, Dominic J. Schepis | 2017-03-21 |
| 9601482 | Economical and environmentally friendly chemical mechanical polishing for III-V compound semiconductor device fabrication | Alexander Reznicek, Devendra K. Sadana, Charan V. Surisetty | 2017-03-21 |
| 9583572 | FinFET devices having silicon germanium channel fin structures with uniform thickness | Veeraraghavan S. Basker, Pouya Hashemi, Alexander Reznicek | 2017-02-28 |
| 9576806 | FinFET device with vertical silicide on recessed source/drain epitaxy regions | Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek | 2017-02-21 |
| 9574287 | Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same | Can Bayram, Christos D. Dimitrakopoulos, Jeehwan Kim, John A. Ott, Devendra K. Sadana | 2017-02-21 |
| 9578736 | Patterned metallization handle layer for controlled spalling | Turki bin Saud bin Mohammed Al-Saud, Stephen W. Bedell, Paul A. Lauro, Devendra K. Sadana | 2017-02-21 |
| 9570295 | Protective capping layer for spalled gallium nitride | Stephen W. Bedell, Paul A. Lauro, Devendra K. Sadana | 2017-02-14 |
| 9564335 | Method for improving quality of spalled material layers | Stephen W. Bedell, Paul A. Lauro, Ning Li, Devendra K. Sadana, Katherine L. Saenger +1 more | 2017-02-07 |
| 9536945 | MOSFET with ultra low drain leakage | Joel P. de Souza, Jeehwan Kim, Devendra K. Sadana | 2017-01-03 |
| 9536736 | Reducing substrate bowing caused by high percentage sige layers | Stephen W. Bedell, Alexander Reznicek, Devendra K. Sadana | 2017-01-03 |
| 9514995 | Implant-free punch through doping layer formation for bulk FinFET structures | Alexander Reznicek, Devendra K. Sadana, Dominic J. Schepis | 2016-12-06 |
| 9508640 | Multiple via structure and method | Cheng-Wei Cheng, Szu-Lin Cheng, Edward W. Kiewra, Amlan Majumdar, Devendra K. Sadana +2 more | 2016-11-29 |
| 9502540 | Uniform height tall fins with varying silicon germanium concentrations | Stephen W. Bedell, Bruce B. Doris, Alexander Reznicek | 2016-11-22 |
| 9502278 | Substrate holder assembly for controlled layer transfer | Stephen W. Bedell, Paul A. Lauro, Devendra K. Sadana | 2016-11-22 |
| 9502609 | Simplified process for vertical LED manufacturing | Stephen W. Bedell, Paul A. Lauro, Devendra K. Sadana | 2016-11-22 |
| 9496186 | Uniform height tall fins with varying silicon germanium concentrations | Stephen W. Bedell, Bruce B. Doris, Alexander Reznicek | 2016-11-15 |
| 9496401 | III-V device structure with multiple threshold voltage | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-11-15 |