JH

Judson R. Holt

IBM: 86 patents #750 of 70,183Top 2%
GU Globalfoundries U.S.: 66 patents #5 of 665Top 1%
Globalfoundries: 41 patents #58 of 4,424Top 2%
GP Globalfoundries Singapore Pte.: 8 patents #91 of 828Top 15%
CM Chartered Semiconductor Manufacturing: 6 patents #107 of 840Top 15%
AM AMD: 4 patents #2,565 of 9,279Top 30%
Infineon Technologies Ag: 3 patents #3,160 of 7,486Top 45%
Samsung: 2 patents #37,631 of 75,807Top 50%
📍 Ballston Lake, NY: #3 of 321 inventorsTop 1%
🗺 New York: #162 of 115,490 inventorsTop 1%
Overall (All Time): #3,759 of 4,157,543Top 1%
190
Patents All Time

Issued Patents All Time

Showing 51–75 of 190 patents

Patent #TitleCo-InventorsDate
11329158 Three part source/drain region structure for transistor Halting Wang, Sipeng Gu 2022-05-10
11217584 Limiting lateral epitaxy growth at N-P boundary using inner spacer, and related structure Jiehui Shu 2022-01-04
11217685 Heterojunction bipolar transistor with marker layer Herbert L. Ho, Vibhor Jain, John J. Pekarik, Claude Ortolland, Qizhi Liu +1 more 2022-01-04
11199672 Multiple waveguide coupling to one or more photodetectors Yusheng Bian, Andreas D. Stricker, Colleen Meagher, Michal Rakowski 2021-12-14
11195925 Heterojunction bipolar transistors Vibhor Jain, Qizhi Liu, Ramsey Hazbun, Pernell Dongmo, John J. Pekarik +1 more 2021-12-07
11177347 Heterojunction bipolar transistor Vibhor Jain, Qizhi Liu, John J. Pekarik 2021-11-16
11164795 Transistors with source/drain regions having sections of epitaxial semiconductor material Sipeng Gu, Haiting Wang, Bangun Indajang 2021-11-02
11150168 Semiconductor manufactured nano-structures for microbe or virus trapping or destruction Yann Astier, David Esteban, Henry K. Utomo 2021-10-19
11145725 Heterojunction bipolar transistor Qizhi Liu, Vibhor Jain, Herbert L. Ho, Claude Ortolland, John J. Pekarik 2021-10-12
11133417 Transistors with a sectioned epitaxial semiconductor layer Sipeng Gu, Halting Wang 2021-09-28
11127831 Transistor structure with overlying gate on polysilicon gate structure and related method Qizhi Liu, Vibhor Jain, John J. Pekarik 2021-09-21
11127843 Asymmetrical lateral heterojunction bipolar transistors Alexander M. Derrickson, Ryan Sporer, George R. Mulfinger, Alexander L. Martin, Jagar Singh 2021-09-21
11094834 Junction field effect transistor (JFET) structure and methods to form same Qizhi Liu, Vibhor Jain, John J. Pekarik 2021-08-17
11094822 Source/drain regions for transistor devices and methods of forming same Arkadiusz Malinowski, Baofu Zhu, Shiv Kumar Mishra 2021-08-17
11081583 FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth Eric C. Harley, Yue Ke, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo 2021-08-03
11075298 LDMOS integrated circuit product Jiehui Shu, Sipeng Gu, Halting Wang 2021-07-27
11063139 Heterojunction bipolar transistors with airgap isolation Vibhor Jain, John J. Pekarik, Qizhi Liu 2021-07-13
11060960 Semiconductor manufactured nano-structures for microbe or virus trapping or destruction Yann Astier, David Esteban, Henry K. Utomo 2021-07-13
11056591 Epitaxial structures of semiconductor devices that are independent of local pattern density Jin Z. Wallner, Heng Yang 2021-07-06
11049955 Epi semiconductor material structures in source/drain regions of a transistor device formed on an SOI substrate Shesh Mani Pandey, Jagar Singh 2021-06-29
11043566 Semiconductor structures in a wide gate pitch region of semiconductor devices Jiehui Shu, Sipeng Gu, Haiting Wang 2021-06-22
11031484 Silicided gate structures George R. Mulfinger, Mark V. Raymond 2021-06-08
10763328 Epitaxial semiconductor material grown with enhanced local isotropy Omur Isil Aydin, Lakshmanan H. Vanamurthy, Tobias Heyne, Pei-Yu Chou, Cäcilia Brantz 2020-09-01
10756184 Faceted epitaxial source/drain regions George R. Mulfinger, Timothy J. McArdle, Steffen Sichler, Omur Isil Aydin, Wei Hong +3 more 2020-08-25
10741556 Self-aligned sacrificial epitaxial capping for trench silicide George R. Mulfinger, Lakshmanan H. Vanamurthy, Scott Beasor, Timothy J. McArdle, Hao Zhang 2020-08-11