JH

Judson R. Holt

IBM: 86 patents #750 of 70,183Top 2%
GU Globalfoundries U.S.: 66 patents #5 of 665Top 1%
Globalfoundries: 41 patents #58 of 4,424Top 2%
GP Globalfoundries Singapore Pte.: 8 patents #91 of 828Top 15%
CM Chartered Semiconductor Manufacturing: 6 patents #107 of 840Top 15%
AM AMD: 4 patents #2,565 of 9,279Top 30%
Infineon Technologies Ag: 3 patents #3,160 of 7,486Top 45%
Samsung: 2 patents #37,631 of 75,807Top 50%
📍 Ballston Lake, NY: #3 of 321 inventorsTop 1%
🗺 New York: #162 of 115,490 inventorsTop 1%
Overall (All Time): #3,759 of 4,157,543Top 1%
190
Patents All Time

Issued Patents All Time

Showing 26–50 of 190 patents

Patent #TitleCo-InventorsDate
11855195 Transistor with wrap-around extrinsic base Xinshu Cai, Shyue Seng Tan, Vibhor Jain, John J. Pekarik, Kien Seen Daniel Chong +3 more 2023-12-26
11855196 Transistor with wrap-around extrinsic base Xinshu Cai, Shyue Seng Tan, Vibhor Jain, John J. Pekarik, Kien Seen Daniel Chong +3 more 2023-12-26
11855197 Vertical bipolar transistors Shesh Mani Pandey, Alexander M. Derrickson, Vibhor Jain 2023-12-26
11848374 Bipolar junction transistors including a portion of a base layer inside a cavity in a dielectric layer Shesh Mani Pandey, Jagar Singh 2023-12-19
11843044 Bipolar transistor structure on semiconductor fin and methods to form same Hong Yu, Alexander M. Derrickson 2023-12-12
11837653 Lateral bipolar junction transistor including a stress layer and method Jagar Singh, Alexander M. Derrickson, Alvin J. Joseph, Andreas Knorr 2023-12-05
11835764 Multiple-core heterogeneous waveguide structures including multiple slots Shesh Mani Pandey, Yusheng Bian 2023-12-05
11810969 Lateral bipolar transistor Haiting Wang, Alexander M. Derrickson, Jagar Singh, Vibhor Jain, Andreas Knorr +2 more 2023-11-07
11804543 Diode structures with one or more raised terminals Vibhor Jain 2023-10-31
11804542 Annular bipolar transistors Alexander M. Derrickson, Arkadiusz Malinowski, Jagar Singh, Mankyu Yang 2023-10-31
11803009 Photonics structures having a locally-thickened dielectric layer Shesh Mani Pandey, Yusheng Bian, Steven M. Shank 2023-10-31
11799021 Lateral bipolar transistor structure with marker layer for emitter and collector Vibhor Jain, Alexander M. Derrickson 2023-10-24
11777019 Lateral heterojunction bipolar transistor with improved breakdown voltage and method Hong Yu, Vibhor Jain 2023-10-03
11749747 Bipolar transistor structure with collector on polycrystalline isolation layer and methods to form same Vibhor Jain, Jeffrey B. Johnson, John J. Pekarik 2023-09-05
11710771 Non-self-aligned lateral bipolar junction transistors Alexander M. Derrickson, Haiting Wang, Jagar Singh, Vibhor Jain 2023-07-25
11695064 Bipolar junction transistors with a wraparound base layer Vibhor Jain, Tayel Nesheiwat, John J. Pekarik, Christopher Durcan 2023-07-04
11652142 Lateral bipolar junction transistors having an emitter extension and a halo region Mankyu Yang, Richard F. Taylor, III, Alexander M. Derrickson, Alexander L. Martin, Jagar Singh +1 more 2023-05-16
11637181 Lateral bipolar transistors with polysilicon terminals Vibhor Jain, Alvin J. Joseph, Alexander M. Derrickson, John J. Pekarik 2023-04-25
11588043 Bipolar transistor with elevated extrinsic base and methods to form same Viorel Ontalus 2023-02-21
11575029 Lateral bipolar junction transistor and method Alexander M. Derrickson, Richard F. Taylor, III, Mankyu Yang, Alexander L. Martin, Jagar Singh 2023-02-07
11567266 Angled grating couplers with inclined side edge portions Yusheng Bian, Qizhi Liu, Elizabeth Strehlow 2023-01-31
11502200 Transistor device having sidewall spacers contacting lower surfaces of an epitaxial semiconductor material Sipeng Gu, Haiting Wang, Yanping Shen 2022-11-15
11448822 Silicon-on-insulator chip structure with substrate-embedded optical waveguide and method Yusheng Bian, Dali Shao 2022-09-20
11424349 Extended shallow trench isolation for ultra-low leakage in fin-type lateral bipolar junction transistor devices Arkadiusz Malinowski, Alexander M. Derrickson 2022-08-23
11393915 Epi semiconductor structures with increased epi volume in source/drain regions of a transistor device formed on an SOI substrate Shesh Mani Pandey 2022-07-19