Issued Patents All Time
Showing 1–25 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12396221 | Junction field-effect transistors | Shyue Seng Tan, Vibhor Jain, John J. Pekarik | 2025-08-19 |
| 12349364 | Memory structures and methods of forming the same | Kian Hui Goh, Shyue Seng Tan | 2025-07-01 |
| 12142673 | Transistor with wrap-around extrinsic base | Shyue Seng Tan, Vibhor Jain, John J. Pekarik, Kien Seen Daniel Chong, Yung Fu Chong +3 more | 2024-11-12 |
| 12107124 | Bipolar transistors | Shyue Seng Tan, Vibhor Jain, John J. Pekarik, Robert J. Gauthier, Jr. | 2024-10-01 |
| 12051761 | Multi-semiconductor layer photodetector and related method | Yongshun Sun, Kiok Boone Elgin Quek, Khee Yong Lim, Shyue Seng Tan, Eng Huat Toh +2 more | 2024-07-30 |
| 11901425 | Non-volatile memory devices with asymmetrical floating gates | Shyue Seng Tan, Eng Huat Toh | 2024-02-13 |
| 11855195 | Transistor with wrap-around extrinsic base | Shyue Seng Tan, Vibhor Jain, John J. Pekarik, Kien Seen Daniel Chong, Yung Fu Chong +3 more | 2023-12-26 |
| 11855196 | Transistor with wrap-around extrinsic base | Shyue Seng Tan, Vibhor Jain, John J. Pekarik, Kien Seen Daniel Chong, Yung Fu Chong +3 more | 2023-12-26 |
| 11839166 | RRAM devices and methods of forming RRAM devices | Shyue Seng Tan, Eng Huat Toh | 2023-12-05 |
| 11810982 | Nonvolatile memory device with a doped region between a source and a drain and integration schemes | Yongshun Sun, Shyue Seng Tan, Eng Huat Toh | 2023-11-07 |
| 11659709 | Single well one transistor and one capacitor nonvolatile memory device and integration schemes | Shyue Seng Tan, Juan Boon Tan, Kiok Boone Elgin Quek, Eng Huat Toh | 2023-05-23 |
| 11641739 | Semiconductor non-volatile memory devices | Yongshun Sun, Eng Huat Toh, Shyue Seng Tan, Lanxiang Wang | 2023-05-02 |
| 11515314 | One transistor two capacitors nonvolatile memory cell | Lanxiang Wang, Yongshun Sun, Eng Huat Toh, Shyue Seng Tan | 2022-11-29 |
| 11502127 | Semiconductor memory devices | Shyue Seng Tan, Eng Huat Toh | 2022-11-15 |
| 11495608 | Multi-finger gate nonvolatile memory cell | Lanxiang Wang, Eng Huat Toh, Shyue Seng Tan, Yongshun Sun | 2022-11-08 |
| 11450677 | Partially silicided nonvolatile memory devices and integration schemes | Lanxiang Wang, Shyue Seng Tan, Eng Huat Toh, Yongshun Sun | 2022-09-20 |
| 11404549 | Split gate flash memory cells with a trench-formed select gate | Shyue Seng Tan, Eng Huat Toh, Kiok Boone Elgin Quek | 2022-08-02 |
| 11380703 | Memory structures and methods of forming memory structures | Yongshun Sun, Lanxiang Wang, Eng Huat Toh, Shyue Seng Tan | 2022-07-05 |
| 11320417 | Nanogap sensors and methods of forming the same | Shyue Seng Tan, Eng Huat Toh, Kiok Boone Elgin Quek | 2022-05-03 |
| 11227924 | Dual bit memory device with triple gate structure | Shyue Seng Tan, Eng Huat Toh | 2022-01-18 |
| 11164881 | Transistor device, memory arrays, and methods of forming the same | Shyue Seng Tan, Danny Pak-Chum Shum | 2021-11-02 |
| 11158643 | Non-volatile memory bit cells with non-rectangular floating gates | Lanxiang Wang, Shyue Seng Tan, Kiok Boone Elgin Quek, Eng Huat Toh | 2021-10-26 |
| 11119917 | Neuromorphic memories with split gate flash multi-level cell and method of making the same | Danny Pak-Chum Shum, Shyue Seng Tan, Fan Zhang, Soh Yun Siah, Tze Ho Simon Chan | 2021-09-14 |
| 11088156 | Memory cells with extended erase gate, and process of fabrication | Shyue Seng Tan, Kiok Boone Elgin Quek, Eng Huat Toh | 2021-08-10 |
| 11054387 | Semiconductor devices with ion-sensitive field effect transistor | Shyue Seng Tan, Eng Huat Toh | 2021-07-06 |