Issued Patents All Time
Showing 76–100 of 157 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9698098 | Anti-fuse structure and method for manufacturing the same | Juntao Li, Junli Wang, Chih-Chao Yang | 2017-07-04 |
| 9666527 | Middle of the line integrated eFuse in trench EPI structure | Juntao Li, Junli Wang, Chih-Chao Yang | 2017-05-30 |
| 9647092 | Method and structure of forming FinFET electrical fuse structure | Juntao Li, Chih-Chao Yang, Yunpeng Yin | 2017-05-09 |
| 9640640 | FinFET device with channel strain | Bruce B. Doris, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie | 2017-05-02 |
| 9640641 | Silicon germanium fin channel formation | Nicolas Loubet, Junli Wang | 2017-05-02 |
| 9634000 | Partially isolated fin-shaped field effect transistors | Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2017-04-25 |
| 9634027 | CMOS structure on SSOI wafer | Bruce B. Doris, Ali Khakifirooz, Junli Wang | 2017-04-25 |
| 9634117 | Self-aligned contact process enabled by low temperature | Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2017-04-25 |
| 9627263 | Stop layer through ion implantation for etch stop | Siva Kanakasabapathy, Yunpeng Yin, Chiahsun Tseng, Junli Wang | 2017-04-18 |
| 9614057 | Enriched, high mobility strained fin having bottom dielectric isolation | Bruce B. Doris, Juntao Li, Junli Wang, Chih-Chao Yang | 2017-04-04 |
| 9608067 | Hybrid aspect ratio trapping | Kangguo Cheng, Ramachandra Divakaruni, Juntao Li | 2017-03-28 |
| 9608068 | Substrate with strained and relaxed silicon regions | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2017-03-28 |
| 9601386 | Fin isolation on a bulk wafer | Juntao Li, Junli Wang, Chih-Chao Yang | 2017-03-21 |
| 9595473 | Critical dimension shrink through selective metal growth on metal hardmask sidewalls | Hsueh-Chung Chen, Juntao Li, Chih-Chao Yang, Yunpeng Yin | 2017-03-14 |
| 9583626 | Silicon germanium alloy fins with reduced defects | Kangguo Cheng, Juntao Li | 2017-02-28 |
| 9583585 | Gate structure integration scheme for fin field effect transistors | Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2017-02-28 |
| 9576979 | Preventing strained fin relaxation by sealing fin ends | Kangguo Cheng, Bruce B. Doris, Sivananda K. Kanakasabapathy, Gauri Karve, Juntao Li +3 more | 2017-02-21 |
| 9570299 | Formation of SiGe nanotubes | Kangguo Cheng, Ali Khakifirooz, Juntao Li | 2017-02-14 |
| 9552988 | Tone inverted directed self-assembly (DSA) fin patterning | Chi-Chun Liu, Alexander Reznicek, Chiahsun Tseng, Tenko Yamashita | 2017-01-24 |
| 9543407 | Low-K spacer for RMG finFET formation | Chiahsun Tseng, Tenko Yamashita, Chun-Chen Yeh, Yunpeng Yin | 2017-01-10 |
| 9536986 | Enriched, high mobility strained fin having bottom dielectric isolation | Bruce B. Doris, Juntao Li, Junli Wang, Chih-Chao Yang | 2017-01-03 |
| 9530777 | FinFETs of different compositions formed on a same substrate | Nicolas Loubet, James Kuss | 2016-12-27 |
| 9520357 | Anti-fuse structure and method for manufacturing the same | Juntao Li, Junli Wang, Chih-Chao Yang | 2016-12-13 |
| 9515141 | FinFET device with channel strain | Bruce B. Doris, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie | 2016-12-06 |
| 9515185 | Silicon germanium-on-insulator FinFET | Qing Liu, Bruce B. Doris | 2016-12-06 |