HH

Hong He

IBM: 140 patents #328 of 70,183Top 1%
SS Stmicroelectronics Sa: 17 patents #66 of 1,676Top 4%
Globalfoundries: 8 patents #444 of 4,424Top 15%
RE Renesas Electronics: 5 patents #829 of 4,529Top 20%
MT Matheson Tri-Gas: 3 patents #10 of 47Top 25%
BT Beijing University Of Technology: 2 patents #75 of 570Top 15%
VS Vishay General Semiconductor: 1 patents #40 of 56Top 75%
TE Tessera: 1 patents #207 of 271Top 80%
RI Riken: 1 patents #679 of 1,824Top 40%
📍 Beijing, NY: #4 of 175 inventorsTop 3%
Overall (All Time): #5,629 of 4,157,543Top 1%
157
Patents All Time

Issued Patents All Time

Showing 126–150 of 157 patents

Patent #TitleCo-InventorsDate
9312367 FinFET with a silicon germanium alloy channel and method of fabrication thereof Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz 2016-04-12
9293345 Sidewall image transfer with a spin-on hardmask Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin 2016-03-22
9293588 FinFET with a silicon germanium alloy channel and method of fabrication thereof Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz 2016-03-22
9287135 Sidewall image transfer process for fin patterning Bruce B. Doris, Sivananda K. Kanakasabapathy, Alexander Reznicek 2016-03-15
9276013 Integrated formation of Si and SiGe fins Bruce B. Doris, Juntao Li, Junli Wang, Chih-Chao Yang 2016-03-01
9269575 Trench sidewall protection for selective epitaxial semiconductor material formation Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz 2016-02-23
9252243 Gate structure integration scheme for fin field effect transistors Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin 2016-02-02
9252014 Trench sidewall protection for selective epitaxial semiconductor material formation Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz 2016-02-02
9222315 Rotary lock block type drilling riser connector Caihu Chen, Dingya Wang, Keren Ren, Ping-hua Deng, Jinquan Wang +1 more 2015-12-29
9218962 Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor Paul Brabant, Keith Chung, Devendra K. Sadana, Manabu Shinriki 2015-12-22
9099401 Sidewall image transfer with a spin-on hardmask Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin 2015-08-04
9093260 Thin hetereostructure channel device Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2015-07-28
9093326 Electrically isolated SiGe fin formation by local oxidation Kangguo Cheng, Chiahsun Tseng, Yunpeng Yin 2015-07-28
9087687 Thin heterostructure channel device Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2015-07-21
9064901 Fin density control of multigate devices through sidewall image transfer processes Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin 2015-06-23
9059019 Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layer Chiahsun Tseng, Junli Wang, Yunpeng Yin 2015-06-16
9059002 Non-merged epitaxially grown MOSFET devices Shogo Mochizuki, Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin 2015-06-16
9053965 Partially isolated Fin-shaped field effect transistors Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin 2015-06-09
9054218 Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek 2015-06-09
9054020 Double density semiconductor fins and method of fabrication Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin 2015-06-09
9041094 Finfet formed over dielectric Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin 2015-05-26
8969189 Contact structure employing a self-aligned gate cap Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin 2015-03-03
8957478 Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layer Chiahsun Tseng, Junli Wang, Yunpeng Yin 2015-02-17
8951850 FinFET formed over dielectric Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin 2015-02-10
8872244 Contact structure employing a self-aligned gate cap Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin 2014-10-28