Issued Patents All Time
Showing 51–75 of 157 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9978775 | FinFET device with abrupt junctions | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Soon-Cheon Seo | 2018-05-22 |
| 9953916 | Critical dimension shrink through selective metal growth on metal hardmask sidewalls | Hsueh-Chung Chen, Juntao Li, Chih-Chao Yang, Yunpeng Yin | 2018-04-24 |
| 9947791 | FinFET with merge-free fins | Chiahsun Tseng, Junli Wang, Chun-Chen Yeh, Yunpeg Yin | 2018-04-17 |
| 9917105 | Replacement fin process in SSOI wafer | Bruce B. Doris, Ali Khakifirooz, Junli Wang | 2018-03-13 |
| 9917019 | Strained FinFET device fabrication | Bruce B. Doris, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Stuart A. Sieg | 2018-03-13 |
| 9911601 | Epitaxial silicon germanium fin formation using sacrificial silicon fin templates | Juntao Li, Junli Wang, Chih-Chao Yang | 2018-03-06 |
| 9899253 | Fabrication of silicon germanium-on-insulator finFET | Bruce B. Doris, Qing Liu | 2018-02-20 |
| 9892910 | Method and structure for forming a dense array of single crystalline semiconductor nanocrystals | Kangguo Cheng, Juntao Li | 2018-02-13 |
| 9881869 | Middle of the line integrated efuse in trench EPI structure | Juntao Li, Junli Wang, Chih-Chao Yang | 2018-01-30 |
| 9882006 | Silicon germanium fin channel formation | Nicolas Loubet, Junli Wang | 2018-01-30 |
| 9881937 | Preventing strained fin relaxation | Kangguo Cheng, Bruce B. Doris, Sivananda K. Kanakasabapathy, Gauri Karve, Juntao Li +3 more | 2018-01-30 |
| 9876074 | Structure and process to tuck fin tips self-aligned to gates | Bruce B. Doris, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Derrick Liu +2 more | 2018-01-23 |
| 9837440 | FinFET device with abrupt junctions | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Soon-Cheon Seo | 2017-12-05 |
| 9837535 | Directional deposition of protection layer | Juntao Li, Junli Wang, Chih-Chao Yang | 2017-12-05 |
| 9805991 | Strained finFET device fabrication | Bruce B. Doris, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Stuart A. Sieg | 2017-10-31 |
| 9805992 | Strained finFET device fabrication | Bruce B. Doris, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Stuart A. Sieg | 2017-10-31 |
| 9768276 | Method and structure of forming FinFET electrical fuse structure | Juntao Li, Chih-Chao Yang, Yunpeng Yin | 2017-09-19 |
| 9768272 | Replacement gate FinFET process using a sit process to define source/drain regions, gate spacers and a gate cavity | Pouya Hashemi, Alexander Reznicek, Tenko Yamashita | 2017-09-19 |
| 9761699 | Integration of strained silicon germanium PFET device and silicon NFET device for finFET structures | Bruce B. Doris, Junli Wang, Nicolas Loubet | 2017-09-12 |
| 9728419 | Fin density control of multigate devices through sidewall image transfer processes | Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2017-08-08 |
| 9728625 | Fin formation in fin field effect transistors | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Yunpeng Yin | 2017-08-08 |
| 9728640 | Hybrid substrate engineering in CMOS finFET integration for mobility improvement | Chia-Yu Chen, Bruce B. Doris, Rajasekhar Venigalla | 2017-08-08 |
| 9728534 | Densely spaced fins for semiconductor fin field effect transistors | Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2017-08-08 |
| 9716038 | Critical dimension shrink through selective metal growth on metal hardmask sidewalls | Hsueh-Chung Chen, Juntao Li, Chih-Chao Yang, Yunpeng Yin | 2017-07-25 |
| 9716045 | Directly forming SiGe fins on oxide | Kangguo Cheng, Juntao Li, Junli Wang | 2017-07-25 |