HY

Haining Yang

IBM: 198 patents #164 of 70,183Top 1%
QU Qualcomm: 49 patents #499 of 12,104Top 5%
Micron: 14 patents #1,151 of 6,345Top 20%
CM Chartered Semiconductor Manufacturing: 4 patents #148 of 840Top 20%
Infineon Technologies Ag: 3 patents #2,452 of 7,486Top 35%
Samsung: 2 patents #37,631 of 75,807Top 50%
Globalfoundries: 2 patents #1,397 of 4,424Top 35%
UH University Of Hawaii: 2 patents #65 of 367Top 20%
CL Cambridge Enterprise Limited: 2 patents #106 of 688Top 20%
Huawei: 1 patents #8,196 of 15,535Top 55%
RU Rice University: 1 patents #21 of 77Top 30%
NU New York University: 1 patents #708 of 1,640Top 45%
KT Kabushiki Kaisha Toshiba: 1 patents #13,537 of 21,451Top 65%
UN Unknown: 1 patents #29,356 of 83,584Top 40%
📍 San Diego, CA: #74 of 23,606 inventorsTop 1%
🗺 California: #277 of 386,348 inventorsTop 1%
Overall (All Time): #1,575 of 4,157,543Top 1%
276
Patents All Time

Issued Patents All Time

Showing 201–225 of 276 patents

Patent #TitleCo-InventorsDate
7514339 Method for fabricating shallow trench isolation structures using diblock copolymer patterning Wai-Kin Li 2009-04-07
7504336 Methods for forming CMOS devices with intrinsically stressed metal silicide layers Robert J. Purtell, Henry K. Utomo, Yun-Yu Wang 2009-03-17
7491585 Electrical fuse and method of making Chih-Chao Yang 2009-02-17
7485508 Two-sided semiconductor-on-insulator structures and methods of manufacturing the same Thomas W. Dyer 2009-02-03
7482209 Hybrid orientation substrate and method for fabrication of thereof Henry K. Utomo, Judson R. Holt 2009-01-27
7482270 Fully and uniformly silicided gate structure and method for forming same Wai-Kin Li 2009-01-27
7482652 Multiwalled carbon nanotube memory device 2009-01-27
7479689 Electronically programmable fuse having anode and link surrounded by low dielectric constant material Deok-kee Kim, Xiangdong Chen 2009-01-20
7470943 High performance MOSFET comprising a stressed gate metal silicide layer and method of fabricating the same 2008-12-30
7462915 Method and apparatus for increase strain effect in a transistor channel Huilong Zhu 2008-12-09
7456450 CMOS devices with hybrid channel orientations and method for fabricating the same Thomas W. Dyer, Xiangdong Chen, James J. Toomey 2008-11-25
7452758 Process for making FinFET device with body contact and buried oxide junction isolation Thomas W. Dyer 2008-11-18
7442611 Method of applying stresses to PFET and NFET transistor channels for improved performance Victor Chan, Yong Meng Lee 2008-10-28
7442614 Silicon on insulator devices having body-tied-to-source and methods of making Thomas W. Dyer, Jack A. Mandelman, Keith Kwong Hon Wong, Chih-Chao Yang 2008-10-28
7436030 Strained MOSFETs on separated silicon layers Thomas W. Dyer, Wai-Kin Li 2008-10-14
7432553 Structure and method to optimize strain in CMOSFETs Xiangdong Chen 2008-10-07
7429752 Method and structure for forming strained SI for CMOS devices An Steegen, Ying Zhang 2008-09-30
7407890 Patterning sub-lithographic features with variable widths 2008-08-05
7396713 Structure and method for forming asymmetrical overlap capacitance in field effect transistors 2008-07-08
7396714 Method of making strained semiconductor transistors having lattice-mismatched semiconductor regions underlying source and drain regions Huajie Chen, Dureseti Chidambarrao, Oleg Gluschenkov, An Steegen 2008-07-08
7396724 Dual-hybrid liner formation without exposing silicide layer to photoresist stripping chemicals Victor Chan, Yong Meng Lee, Eng Hua Lim 2008-07-08
7390745 Pattern enhancement by crystallographic etching Thomas W. Dyer, Kenneth T. Settlemyer, Jr., James J. Toomey 2008-06-24
7388267 Selective stress engineering for SRAM stability improvement Xiangdong Chen, Young-Gun Ko 2008-06-17
7385258 Transistors having v-shape source/drain metal contacts Huilong Zhu, Zhijiong Luo 2008-06-10
7384852 Sub-lithographic gate length transistor using self-assembling polymers Wai-Kin Li 2008-06-10