Issued Patents All Time
Showing 76–100 of 149 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8946853 | Diffusion sidewall for a semiconductor structure | Dechao Guo, Shu-Jen Han, Ning Su | 2015-02-03 |
| 8940591 | Embedded silicon germanium N-type filed effect transistor for reduced floating body effect | Leland Chang, Isaac Lauer, Jeffrey W. Sleight | 2015-01-27 |
| 8940558 | Techniques for quantifying fin-thickness variation in FINFET technology | Wilfried Haensch, Philip J. Oldiges, Kern Rim | 2015-01-27 |
| 8936972 | Epitaxially thickened doped or undoped core nanowire FET structure and method for increasing effective device width | Sarunya Bangsaruntip, Guy M. Cohen, Jeffrey W. Sleight | 2015-01-20 |
| 8927397 | Diode structure and method for gate all around silicon nanowire technologies | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2015-01-06 |
| 8928083 | Diode structure and method for FINFET technologies | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2015-01-06 |
| 8901655 | Diode structure for gate all around silicon nanowire technologies | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2014-12-02 |
| 8900934 | FinFET devices containing merged epitaxial Fin-containing contact regions | Thomas N. Adam, Veeraraghavan S. Basker, Jinghong Li, Sebastian Naczas, Alexander Reznicek +1 more | 2014-12-02 |
| 8896063 | FinFET devices containing merged epitaxial Fin-containing contact regions | Thomas N. Adam, Veeraraghavan S. Basker, Jinghong Li, Sebastian Naczas, Alexander Reznicek +1 more | 2014-11-25 |
| 8895372 | Graphene based three-dimensional integrated circuit device | Dechao Guo, Shu-Jen Hen, Ning Su | 2014-11-25 |
| 8877593 | Semiconductor device including an asymmetric feature, and method of making the same | Josephine B. Chang, Isaac Lauer, Jeffrey Sleight | 2014-11-04 |
| 8871626 | FinFET with vertical silicide structure | Veeraraghavan S. Basker, Tenko Yamashita, Chun-Chen Yeh | 2014-10-28 |
| 8835997 | Low extension dose implants in SRAM fabrication | Leland Chang, Shih-Hsien Lo, Jeffrey W. Sleight | 2014-09-16 |
| 8823064 | Asymmetric FET formed through use of variable pitch gate for use as logic device and test structure | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2014-09-02 |
| 8822278 | Asymmetric FET formed through use of variable pitch gate for use as logic device and test structure | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2014-09-02 |
| 8822295 | Low extension dose implants in SRAM fabrication | Leland Chang, Shih-Hsien Lo, Jeffrey W. Sleight | 2014-09-02 |
| 8816327 | Nanowire efuses | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2014-08-26 |
| 8802535 | Doped core trigate FET structure and method | Sarunya Bangsaruntip, Siyuranga O. Koswatta, Jeffrey W. Sleight | 2014-08-12 |
| 8806419 | Apparatus for modeling of FinFET width quantization | Wilfried Ernest-August Haensch, Philip J. Oldiges, Hailing Wang, Richard Q. Williams | 2014-08-12 |
| 8799848 | Methods for modeling of FinFET width quantization | Wilfried Ernest-August Haensch, Philip J. Oldiges, Hailing Wang, Richard Q. Williams | 2014-08-05 |
| 8741730 | Bi-directional self-aligned FET capacitor | Leland Chang, Brian L. Ji, Jeffrey W. Sleight | 2014-06-03 |
| 8742475 | Field effect transistor device and fabrication | Dechao Guo, Shu-Jen Han, Yanfeng Wang | 2014-06-03 |
| 8742511 | Double gate planar field effect transistors | Josephine B. Chang, Leland Chang, Jeffrey W. Sleight | 2014-06-03 |
| 8736023 | Field effect transistor device and fabrication | Dechao Guo, Shu-Jen Han, Yanfeng Wang | 2014-05-27 |
| 8722472 | Hybrid CMOS nanowire mesh device and FINFET device | Josephine B. Chang, Leland Chang, Jeffrey W. Sleight | 2014-05-13 |