Issued Patents All Time
Showing 51–75 of 149 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9385026 | Sublithographic Kelvin structure patterned with DSA | Josephine B. Chang, Michael A. Guillorn, HsinYu Tsai | 2016-07-05 |
| 9385027 | Sublithographic Kelvin structure patterned with DSA | Josephine B. Chang, Michael A. Guillorn, HsinYu Tsai | 2016-07-05 |
| 9324801 | Nanowire FET with tensile channel stressor | Isaac Lauer, Jeffrey W. Sleight | 2016-04-26 |
| 9281397 | Semiconductor device including an asymmetric feature | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2016-03-08 |
| 9250204 | Graphene sensor | Dechao Guo, Shu-Jen Han, Ning Su | 2016-02-02 |
| 9230989 | Hybrid CMOS nanowire mesh device and FINFET device | Josephine B. Chang, Leland Chang, Jeffrey W. Sleight | 2016-01-05 |
| 9214529 | Fin Fet device with independent control gate | Josephine B. Chang, Michael A. Guillorn | 2015-12-15 |
| 9190419 | Diode structure and method for FINFET technologies | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2015-11-17 |
| 9177923 | Through-substrate via shielding | Daeik Daniel Kim, Chandrasekharan Kothandaraman, John M. Safran | 2015-11-03 |
| 9157887 | Graphene sensor | Dechao Guo, Shu-Jen Han, Ning Su | 2015-10-13 |
| 9087909 | Hybrid extremely thin silicon-on-insulator (ETSOI) structure to minimize noise coupling from TSV | Yu-Shiang Lin, Shih-Hsien Lo, Joel A. Silberman | 2015-07-21 |
| 9070698 | Through-substrate via shielding | Daeik Daniel Kim, Chandrasekharan Kothandaraman, John M. Safran | 2015-06-30 |
| 9068936 | Graphene sensor | Dechao Guo, Shu-Jen Han, Ning Su | 2015-06-30 |
| 9064739 | Techniques for quantifying fin-thickness variation in FINFET technology | Wilfried Haensch, Philip J. Oldiges, Kern Rim | 2015-06-23 |
| 9058441 | Methods for modeling of FinFET width quantization | Wilfried Ernest-August Haensch, Philip J. Oldiges, Hailing Wang, Richard Q. Williams | 2015-06-16 |
| 9059289 | Stringer-free gate electrode for a suspended semiconductor fin | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2015-06-16 |
| 9053981 | Hybrid CMOS nanowire mesh device and PDSOI device | Josephine B. Chang, Leland Chang, Jeffrey W. Sleight | 2015-06-09 |
| 9041057 | Field effect transistor device with shaped conduction channel | Dechao Guo, Shu-Jen Han | 2015-05-26 |
| 9029213 | Stringer-free gate electrode for a suspended semiconductor fin | Josephine B. Chang, Isaac Lauer, Jeffrey Sleight | 2015-05-12 |
| 9018084 | Tapered fin field effect transistor | Josephine B. Chang, Michael A. Guillorn, Ryan M. Martin, Jeffrey W. Sleight | 2015-04-28 |
| 9006087 | Diode structure and method for wire-last nanomesh technologies | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2015-04-14 |
| 8994108 | Diode structure and method for wire-last nanomesh technologies | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2015-03-31 |
| 8981478 | Recessed source and drain regions for FinFETs | Josephine B. Chang, Paul Chang, Michael A. Guillorn, Jeffrey W. Sleight | 2015-03-17 |
| 8969187 | Self-aligned contacts | Dechao Guo, Wilfried Haensch, Shu-Jen Han | 2015-03-03 |
| 8969964 | Embedded silicon germanium N-type field effect transistor for reduced floating body effect | Leland Chang, Isaac Lauer, Jeffrey W. Sleight | 2015-03-03 |