Issued Patents All Time
Showing 101–125 of 149 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8709888 | Hybrid CMOS nanowire mesh device and PDSOI device | Josephine B. Chang, Leland Chang, Jeffrey W. Sleight | 2014-04-29 |
| 8673731 | Techniques for gate workfunction engineering to reduce short channel effects in planar CMOS devices | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2014-03-18 |
| 8669167 | Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devices | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2014-03-11 |
| 8669615 | Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devices | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2014-03-11 |
| 8664058 | Semiconductor device having silicon on stressed liner (SOL) | Stephen W. Bedell, Josephine B. Chang | 2014-03-04 |
| 8659084 | Techniques for gate workfunction engineering to reduce short channel effects in planar CMOS devices | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2014-02-25 |
| 8658518 | Techniques for metal gate work function engineering to enable multiple threshold voltage nanowire FET devices | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2014-02-25 |
| 8659006 | Techniques for metal gate work function engineering to enable multiple threshold voltage nanowire FET devices | Josephine B. Chang, Isaac Lauer, Jeffrey W. Sleight | 2014-02-25 |
| 8643107 | Body-tied asymmetric N-type field effect transistor | Jeffrey W. Sleight, Josephine B. Chang, Leland Chang | 2014-02-04 |
| 8637371 | Non-planar MOSFET structures with asymmetric recessed source drains and methods for making the same | Josephine B. Chang, Paul Chang, Michael A. Guillorn, Jeffrey W. Sleight | 2014-01-28 |
| 8637931 | finFET with merged fins and vertical silicide | Veeraraghavan S. Basker, Andres Bryant, Huiming Bu, Wilfried E. Haensch, Effendi Leobandung +3 more | 2014-01-28 |
| 8619465 | 8-transistor SRAM cell design with inner pass-gate junction diodes | Leland Chang, Isaac Lauer, Jeffrey W. Sleight | 2013-12-31 |
| 8597991 | Embedded silicon germanium n-type filed effect transistor for reduced floating body effect | Leland Chang, Isaac Lauer, Jeffrey W. Sleight | 2013-12-03 |
| 8592264 | Source-drain extension formation in replacement metal gate transistor device | Takashi Ando, Huiming Bu, Ramachandra Divakaruni, Bruce B. Doris, Huiling Shang +1 more | 2013-11-26 |
| 8563376 | Hybrid CMOS nanowire mesh device and bulk CMOS device | Josephine B. Chang, Leland Chang, Jeffrey W. Sleight | 2013-10-22 |
| 8557648 | Recessed source and drain regions for FinFETs | Josephine B. Chang, Paul Chang, Michael A. Guillorn, Jeffrey W. Sleight | 2013-10-15 |
| 8551833 | Double gate planar field effect transistors | Josephine B. Chang, Leland Chang, Jeffrey W. Sleight | 2013-10-08 |
| 8536651 | Multi-gate transistor having sidewall contacts | Josephine B. Chang, Dechao Guo, Shu-Jen Han | 2013-09-17 |
| 8536029 | Nanowire FET and finFET | Josephine B. Chang, Jeffrey W. Sleight | 2013-09-17 |
| 8531871 | 8-transistor SRAM cell design with Schottky diodes | Leland Chang, Isaac Lauer, Jeffrey W. Sleight | 2013-09-10 |
| 8526228 | 8-transistor SRAM cell design with outer pass-gate diodes | Leland Chang, Isaac Lauer, Jeffrey W. Sleight | 2013-09-03 |
| 8518770 | Recessed contact for multi-gate FET optimizing series resistance | Josephine B. Chang | 2013-08-27 |
| 8513131 | Fin field effect transistor with variable channel thickness for threshold voltage tuning | Ming Cai, Dechao Guo, Chun-Chen Yeh | 2013-08-20 |
| 8466012 | Bulk FinFET and SOI FinFET hybrid technology | Josephine B. Chang, Leland Chang, Jeffrey W. Sleight | 2013-06-18 |
| 8460991 | Differentially recessed contacts for multi-gate transistor of SRAM cell | Josephine B. Chang, Leland Chang, Jeffrey W. Sleight | 2013-06-11 |